BUL45AF

更新时间： 2024-11-14 13:00:11

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率双极晶体管
页数	文件大小	规格书
10页	395K
描述
Power Bipolar Transistor, 5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

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by BUL45/D

SEMICONDUCTOR TECHNICAL DATA

*Motorola Preferred Device

High Voltage SWITCHMODE Series

POWER TRANSISTOR

5.0 AMPERES

Designed for use in electronic ballast (light ballast) and in Switchmode Power

supplies up to 50 Watts. Main features include:

700 VOLTS

35 and 75 WATTS

•

Improved Efficiency Due to:

— Low Base Drive Requirements (High and Flat DC Current Gain h

— Low Power Losses (On–State and Switching Operations)

)

— Fast Switching: t = 100 ns (typ) and t = 3.2 µs (typ)

fi si

— Fast Switching: @ I = 2.0 A, I = I = 0.4 A

B1 B2

•

Full Characterization at 125°C

Tight Parametric Distributions Consistent Lot–to–Lot

BUL45F, Case 221D, is UL Recognized at 3500 V

: File #E69369

RMS

MAXIMUM RATINGS

Rating

Symbol

BUL45

BUL45F

Unit

Vdc

Adc

Collector–Emitter Sustaining Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Voltage

CEO

400

700

9.0

BUL45

CASE 221A–06

TO–220AB

CES

EBO

Collector Current — Continuous

— Peak(1)

5.0

Base Current

2.0

Adc

RMS Isolated Voltage(2)

(for 1 sec, R.H. < 30%,

Test No. 1 Per Fig. 22a

Test No. 2 Per Fig. 22b

Test No. 3 Per Fig. 22c

ISOL

—

4500

3500

1500

Volts

= 25°C)

Total Device Dissipation

Derate above 25°C

(T = 25°C)

0.6

0.28

Watts

W/°C

Operating and Storage Temperature

T , T

J stg

– 65 to 150

°C

THERMAL CHARACTERISTICS

Rating

BUL45F

CASE 221D–02

ISOLATED TO–220 TYPE

UL RECOGNIZED

Symbol MJE18006 MJF18006

Unit

Thermal Resistance — Junction to Case

θJC

θJA

1.65

62.5

3.55

62.5

°C/W

— Junction to Ambient

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (I = 100 mA, L = 25 mH)

400

—

Vdc

µAdc

CEO(sus)

Collector Cutoff Current (V

= Rated V

, I = 0)

CEO

100

CEO

= Rated V

, V

= 0)

—

100

CES EB

CES

(T = 125°C)

Emitter Cutoff Current (V

= 9.0 Vdc, I = 0)

—

100

µAdc

EBO

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.

(continued)

(2) Proper strike and creepage distance must be provided.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4 5 6 7...10

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与BUL45AF相关器件

型号	品牌	获取价格	描述	数据表
BUL45AJ	MOTOROLA	获取价格	暂无描述
BUL45AK	ONSEMI	获取价格	5A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BUL45AN	ONSEMI	获取价格	5A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BUL45AS	ONSEMI	获取价格	5A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BUL45AU	ONSEMI	获取价格	5A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BUL45BA	ONSEMI	获取价格	5A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BUL45BC	ONSEMI	获取价格	5A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BUL45BD	ONSEMI	获取价格	5A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BUL45BG	ONSEMI	获取价格	5A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BUL45BS	ONSEMI	获取价格	TRANSISTOR 5 A, 400 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu

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