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BUL45D2BS PDF预览

BUL45D2BS

更新时间： 2024-11-14 13:06:03
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
12页 446K
描述
5A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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BUL45D2BS 技术参数

是否Rohs认证：不符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：PLASTIC, TO-220AB, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.75
Is Samacsys：N其他特性：BUILT-IN ANTISATURATION NETWORK
外壳连接：COLLECTOR最大集电极电流 (IC)：5 A
集电极-发射极最大电压：400 V配置：SINGLE WITH BUILT-IN DIODE
最小直流电流增益 (hFE)：10JESD-30 代码：R-PSFM-T3
JESD-609代码：e0元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN认证状态：Not Qualified
表面贴装：NO端子面层：TIN LEAD
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：13 MHz
Base Number Matches：1

BUL45D2BS 数据手册

 浏览型号BUL45D2BS的Datasheet PDF文件第2页浏览型号BUL45D2BS的Datasheet PDF文件第3页浏览型号BUL45D2BS的Datasheet PDF文件第4页浏览型号BUL45D2BS的Datasheet PDF文件第5页浏览型号BUL45D2BS的Datasheet PDF文件第6页浏览型号BUL45D2BS的Datasheet PDF文件第7页 
Order this document  
by BUL45D2/D  
SEMICONDUCTOR TECHNICAL DATA  
POWER TRANSISTORS  
5 AMPERES  
700 VOLTS  
75 WATTS  
The BUL45D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP).  
High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time)  
make it ideally suitable for light ballast applications. Therefore, there is no need to  
guarantee an h  
window.  
FE  
Main features:  
•
•
•
Low Base Drive Requirement  
High Peak DC Current Gain (55 Typical) @ I = 100 mA  
Extremely Low Storage Time Min/Max Guarantees Due to the  
H2BIP Structure which Minimizes the Spread  
C
•
•
•
Integrated Collector–Emitter Free Wheeling Diode  
Fully Characterized and Guaranteed Dynamic V  
CE(sat)  
“6 Sigma” Process Providing Tight and Reproductible Parameter Spreads  
It’s characteristics make it also suitable for PFC application.  
CASE 221A–06  
TO–220AB  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
400  
700  
700  
12  
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Sustaining Voltage  
Collector–Base Breakdown Voltage  
Collector–Emitter Breakdown Voltage  
Emitter–Base Voltage  
V
V
CEO  
CBO  
V
CES  
EBO  
V
Collector Current — Continuous  
— Peak (1)  
I
C
5
10  
I
CM  
Base Current — Continuous  
Base Current — Peak (1)  
I
2
4
Adc  
B
I
BM  
*Total Device Dissipation @ T = 25 C  
C
*Derate above 25°C  
P
D
75  
0.6  
Watt  
W/ C  
Operating and Storage Temperature  
T , T  
–65 to 150  
C
J
stg  
THERMAL CHARACTERISTICS  
Thermal Resistance  
— Junction to Case  
— Junction to Ambient  
C/W  
R
θJC  
R
θJA  
1.65  
62.5  
Maximum Lead Temperature for Soldering Purposes:  
1/8″ from case for 5 seconds  
T
L
260  
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.  
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
Motorola, Inc. 1995
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BUL45D2BU ONSEMI

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 		5A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BUL45D2BV ONSEMI

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 		5A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BUL45D2DW ONSEMI

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BUL45D2G ONSEMI

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 		High Speed, High Gain Bipolar NPN Power Transistor
BUL45F MOTOROLA

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 		POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS
BUL45F ONSEMI

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 		POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS
BUL45G ONSEMI

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 		NPN Silicon Power Transistor
BUL45L MOTOROLA

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 		Power Bipolar Transistor, 5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
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 		Power Bipolar Transistor, 5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BUL45S MOTOROLA

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 		5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB

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