BUL45D2AF

更新时间： 2024-11-14 13:05:59

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管功率双极晶体管开关局域网
页数	文件大小	规格书
12页	446K
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数据手册

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BUL45D2AF 数据手册

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by BUL45D2/D

SEMICONDUCTOR TECHNICAL DATA

POWER TRANSISTORS

5 AMPERES

700 VOLTS

75 WATTS

The BUL45D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP).

High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time)

make it ideally suitable for light ballast applications. Therefore, there is no need to

guarantee an h

window.

Main features:

•

Low Base Drive Requirement

High Peak DC Current Gain (55 Typical) @ I = 100 mA

Extremely Low Storage Time Min/Max Guarantees Due to the

H2BIP Structure which Minimizes the Spread

•

Integrated Collector–Emitter Free Wheeling Diode

Fully Characterized and Guaranteed Dynamic V

CE(sat)

“6 Sigma” Process Providing Tight and Reproductible Parameter Spreads

It’s characteristics make it also suitable for PFC application.

CASE 221A–06

TO–220AB

MAXIMUM RATINGS

Rating

Symbol

Value

400

700

Unit

Vdc

Adc

Collector–Emitter Sustaining Voltage

Collector–Base Breakdown Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Voltage

CEO

CBO

CES

EBO

Collector Current — Continuous

— Peak (1)

Base Current — Continuous

Base Current — Peak (1)

Adc

*Total Device Dissipation @ T = 25 C

*Derate above 25°C

0.6

Watt

W/ C

Operating and Storage Temperature

T , T

–65 to 150

stg

THERMAL CHARACTERISTICS

Thermal Resistance

— Junction to Case

— Junction to Ambient

C/W

θJC

θJA

1.65

62.5

Maximum Lead Temperature for Soldering Purposes:

1/8″ from case for 5 seconds

260

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4 5 6 7...12

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与BUL45D2AF相关器件

型号	品牌	获取价格	描述	数据表
BUL45D2AJ	ONSEMI	获取价格	5A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BUL45D2AK	ONSEMI	获取价格	暂无描述
BUL45D2AN	ONSEMI	获取价格	5A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BUL45D2AS	ONSEMI	获取价格	TRANSISTOR 5 A, 400 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
BUL45D2AU	ONSEMI	获取价格	5A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BUL45D2BA	ONSEMI	获取价格	5A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BUL45D2BC	ONSEMI	获取价格	TRANSISTOR 5 A, 400 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
BUL45D2BD	ONSEMI	获取价格	5A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BUL45D2BG	ONSEMI	获取价格	5A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BUL45D2BS	ONSEMI	获取价格	5A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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