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BUL45D2AF

更新时间: 2024-11-14 13:05:59
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安森美 - ONSEMI 晶体晶体管功率双极晶体管开关局域网
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12页 446K
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BUL45D2AF 数据手册

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Order this document  
by BUL45D2/D  
SEMICONDUCTOR TECHNICAL DATA  
POWER TRANSISTORS  
5 AMPERES  
700 VOLTS  
75 WATTS  
The BUL45D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP).  
High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time)  
make it ideally suitable for light ballast applications. Therefore, there is no need to  
guarantee an h  
window.  
FE  
Main features:  
Low Base Drive Requirement  
High Peak DC Current Gain (55 Typical) @ I = 100 mA  
Extremely Low Storage Time Min/Max Guarantees Due to the  
H2BIP Structure which Minimizes the Spread  
C
Integrated Collector–Emitter Free Wheeling Diode  
Fully Characterized and Guaranteed Dynamic V  
CE(sat)  
“6 Sigma” Process Providing Tight and Reproductible Parameter Spreads  
It’s characteristics make it also suitable for PFC application.  
CASE 221A–06  
TO–220AB  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
400  
700  
700  
12  
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Sustaining Voltage  
Collector–Base Breakdown Voltage  
Collector–Emitter Breakdown Voltage  
Emitter–Base Voltage  
V
V
CEO  
CBO  
V
CES  
EBO  
V
Collector Current — Continuous  
— Peak (1)  
I
C
5
10  
I
CM  
Base Current — Continuous  
Base Current — Peak (1)  
I
2
4
Adc  
B
I
BM  
*Total Device Dissipation @ T = 25 C  
C
*Derate above 25°C  
P
D
75  
0.6  
Watt  
W/ C  
Operating and Storage Temperature  
T , T  
65 to 150  
C
J
stg  
THERMAL CHARACTERISTICS  
Thermal Resistance  
— Junction to Case  
— Junction to Ambient  
C/W  
R
θJC  
R
θJA  
1.65  
62.5  
Maximum Lead Temperature for Soldering Purposes:  
1/8from case for 5 seconds  
T
L
260  
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.  
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
Motorola, Inc. 1995

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