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BUL45BA

更新时间： 2024-11-14 19:20:59
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关晶体管
页数 文件大小 规格书
8页 185K
描述
5A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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中文翻译

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BUL45BA 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：PLASTIC, TO-220AB, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.74
外壳连接：COLLECTOR最大集电极电流 (IC)：5 A
集电极-发射极最大电压：400 V配置：SINGLE
最小直流电流增益 (hFE)：7JESD-30 代码：R-PSFM-T3
JESD-609代码：e0元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN认证状态：Not Qualified
表面贴装：NO端子面层：TIN LEAD
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：12 MHz
Base Number Matches：1

BUL45BA 数据手册

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BUL45G  
NPN Silicon Power  
Transistor  
High Voltage SWITCHMODE Series  
Designed for use in electronic ballast (light ballast) and in  
SWITCHMODE Power supplies up to 50 W.  
http://onsemi.com  
Features  
Improved Efficiency Due to:  
POWER TRANSISTOR  
5.0 AMPERES, 700 VOLTS,  
35 AND 75 WATTS  
Low Base Drive Requirements (High and Flat DC Current Gain hFE)  
Low Power Losses (On--State and Switching Operations)  
Fast Switching: tfi = 100 ns (typ) and tsi = 3.2 ms (typ)  
@ IC = 2.0 A, IB1 = IB2 = 0.4 A  
Full Characterization at 125C  
Tight Parametric Distributions Consistent Lot--to--Lot  
These Devices are Pb--Free and are RoHS Compliant*  
TO--220AB  
CASE 221A--09  
STYLE 1  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
1
2
3
Collector--Emitter Sustaining Voltage  
V
400  
Vdc  
CEO  
Collector--Base Breakdown Voltage  
Emitter--Base Voltage  
V
700  
9.0  
Vdc  
Vdc  
Adc  
CES  
EBO  
V
MARKING DIAGRAM  
Collector Current -- Continuous  
-- Peak (Note 1)  
I
5.0  
10  
C
I
CM  
Base Current  
I
2.0  
Adc  
B
Total Device Dissipation @ T = 25_C  
P
75  
W
C
D
BUL45G  
AY WW  
Derate above 25C  
0.6  
W/_C  
Operating and Storage Temperature  
THERMAL CHARACTERISTICS  
T , T  
J
--65 to 150  
_C  
stg  
Characteristics  
Symbol  
Max  
Unit  
_C/W  
_C/W  
Thermal Resistance, Junction--to--Case  
R
θ
1.65  
BUL45 = Device Code  
JC  
A
Y
= Assembly Location  
= Year  
Thermal Resistance, Junction--to--Ambient  
R
θ
62.5  
JA  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.  
WW  
G
= Work Week  
= Pb--Free Package  
ORDERING INFORMATION  
Device  
Package  
Shipping  
50 Units / Rail  
BUL45G  
TO--220  
(Pb--Free)  
*For additional information on our Pb--Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
October, 2011 -- Rev. 9  
BUL45/D  
12345678

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 		5A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
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 		5A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
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 		5A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
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 		TRANSISTOR 5 A, 400 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
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 		5A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BUL45C MOTOROLA

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 		Power Bipolar Transistor, 5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BUL45D1 MOTOROLA

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 		5A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
BUL45D2 ONSEMI

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 		POWER TRANSISTORS 5 AMPERES 700 VOLTS 75 WATTS
BUL45D2 MOTOROLA

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 		POWER TRANSISTORS 5 AMPERES 700 VOLTS 75 WATTS
BUL45D2/D ETC

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 		High Speed， High Gain Bipolar NPN Power Trans

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