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BUL45AN

更新时间： 2024-09-26 13:01:55
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
8页 121K
描述
5A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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中文翻译

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BUL45AN 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：PLASTIC, TO-220AB, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.75
外壳连接：COLLECTOR最大集电极电流 (IC)：5 A
集电极-发射极最大电压：400 V配置：SINGLE
最小直流电流增益 (hFE)：7JESD-30 代码：R-PSFM-T3
JESD-609代码：e0元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN认证状态：Not Qualified
表面贴装：NO端子面层：TIN LEAD
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：12 MHz
Base Number Matches：1

BUL45AN 数据手册

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BUL45  
NPN Silicon Power  
Transistor  
High Voltage SWITCHMODEt Series  
Designed for use in electronic ballast (light ballast) and in  
Switchmode Power supplies up to 50 Watts.  
http://onsemi.com  
Features  
POWER TRANSISTOR  
5.0 AMPERES, 700 VOLTS,  
35 AND 75 WATTS  
• Improved Efficiency Due to:  
♦ Low Base Drive Requirements (High and Flat DC Current Gain h )  
FE  
♦ Low Power Losses (On−State and Switching Operations)  
♦ Fast Switching: t = 100 ns (typ) and t = 3.2 ms (typ)  
fi  
si  
♦ @ I = 2.0 A, I = I = 0.4 A  
C
B1  
B2  
• Full Characterization at 125°C  
• Tight Parametric Distributions Consistent Lot−to−Lot  
• Pb−Free Package is Available*  
TO−220AB  
CASE 221A−09  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
400  
Unit  
Vdc  
Vdc  
1
STYLE 1  
2
Collector−Emitter Sustaining Voltage  
Collector−Base Breakdown Voltage  
V
3
CEO  
V
700  
CES  
EBO  
Emitter−Base Voltage  
V
9.0  
Vdc  
Adc  
MARKING DIAGRAM  
Collector Current − Continuous  
− Peak (Note 1)  
I
5.0  
10  
C
I
CM  
Base Current  
I
2.0  
Adc  
B
Total Device Dissipation @ T = 25_C  
P
75  
0.6  
W
W/_C  
C
D
Derate above 25°C  
BUL45G  
AY WW  
Operating and Storage Temperature  
THERMAL CHARACTERISTICS  
T , T  
−65 to 150  
_C  
J
stg  
Characteristics  
Symbol  
Max  
1.65  
62.5  
Unit  
_C/W  
_C/W  
Thermal Resistance, Junction−to−Case  
Thermal Resistance, Junction−to−Ambient  
R
q
JC  
JA  
R
q
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
BUL45 = Device Code  
A
= Assembly Location  
Y
= Year  
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.  
WW  
G
= Work Week  
= Pb−Free Package  
ORDERING INFORMATION  
Device  
BUL45  
Package  
Shipping  
TO−220  
50 Units / Rail  
50 Units / Rail  
BUL45G  
TO−220  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 7  
BUL45/D  
 
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 		5A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
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BUL45D1 MOTOROLA

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