Datasheet > BUK7J2R4-80M

BUK7J2R4-80M

更新时间： 2024-03-03 10:10:20

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
9页	217K
描述
N-channel 80 V, 2.4 mOhm, Standard level MOSFET in LFPAK56EDevelopment

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BUK7J2R4-80M 数据手册

BUK7J2R4-80M

N-channel 80 V, 2.4 mOhm, Standard level MOSFET in

LFPAK56E

9 October 2023

Objective data sheet

1. General description

Automotive qualified N-channel MOSFET using the latest Trench 14 low ohmic split-gate

technology, for ultra-low R_DSoncapability, housed in a LFPAK56E package. This product has been

fully designed and qualified to meet AEC-Q101 requirements delivering high performance and

endurance.

2. Features and benefits

•

Fully automotive qualified to AEC-Q101:

175 °C rating suitable for thermally demanding environments

Trench 14 split-gate technology:

•

Reduced cell pitch enables enhanced power density and efficiency with lower R_DSonin

same footprint

•

Fast and efficient switching with high damping and low spiking

•

LFPAK Gull Wing leads:

•

High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike

traditional QFN packages

•

Visual (AOI) soldering inspection, no need for expensive x-ray equipment

Easy solder wetting for good mechanical solder joints

•

LFPAK copper clip technology:

•

Improved reliability, with reduced R_th, R_DSonand package inductance

Increases maximum current capability and improved current spreading

3. Applications

•

12 V, 24 V and 48 V automotive systems

Motor, lighting and solenoid control

Ultra high-performance power switching

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

I_D

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C

231

294

175

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

junction temperature

T_j

-55

°C

Static characteristics

R_DSondrain-source on-state

resistance

Dynamic characteristics

Q_G(tot)total gate charge

V_GS= 10 V; I_D= 25 A; T_j= 25 °C

I_D= 25 A; V_DS= 64 V; V_GS= 10 V

[tbd]

2.4

mΩ

[tbd]

12 3 4 5 6 7...9

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