BUK136-50L

更新时间： 2024-11-13 09:02:23

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
7页	46K
描述
Logic level TOPFET SMD version of BUK125-50L

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中文翻译

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数据手册

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BUK136-50L 数据手册

Philips Semiconductors

Product specification

Logic level TOPFET

SMD version of BUK125-50L

BUK136-50L

DESCRIPTION

QUICK REFERENCE DATA

Monolithic logic level protected

power MOSFET using TOPFET2

technology assembled in a 5 pin

surface mounting plastic package.

SYMBOL

PARAMETER

MAX.

UNIT

V_DS

I_D

P_tot

T_j

Continuous drain source voltage

Continuous drain current

Total power dissipation

Continuous junction temperature

Drain-source on-state resistance

107

150

˚C

mΩ

APPLICATIONS

R_DS(ON)

General purpose switch for

automotive systems and other

applications.

SYMBOL

PARAMETER

NOM.

UNIT

V_PS

Protection supply voltage

FEATURES

FUNCTIONAL BLOCK DIAGRAM

TrenchMOS output stage with

low on-state resistance

Separate input pin for higher

frequency drive

PROTECTION SUPPLY

DRAIN

5 V logic compatible input

Separate supply pin for logic

and protection circuits with low

operating current

FLAG

OC LOAD

O/V

DETECT

CLAMP

POWER

Overtemperature protection

Drain current limiting

INPUT

MOSFET

RIG

Short circuit load protection

Latched overload trip state reset

by the protection pin

Diagnostic flag pin indicates

protection supply connected,

overtemperature condition,overload

tripped state, or open circuit load

(detected in the off-state)

ESD protection on all pins

Overvoltage clamping

LOGIC AND

PROTECTION

SOURCE

Fig.1. Elements of the TOPFET.

PINNING - SOT426

PIN CONFIGURATION

SYMBOL

DESCRIPTION

input

flag

TOPFET

(connected to mb)

protection supply

source

1 2

4 5

Fig. 2.

Fig. 3.

mb drain

July 2002

Rev 1.000

12 3 4 5 6 7

中文翻译

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