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BUK200-50Y PDF预览

BUK200-50Y

更新时间: 2024-11-12 22:17:31
品牌 Logo 应用领域
恩智浦 - NXP 晶体开关晶体管
页数 文件大小 规格书
13页 130K
描述
PowerMOS transistor TOPFET high side switch

BUK200-50Y 数据手册

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Philips Semiconductors  
Product specification  
PowerMOS transistor  
TOPFET high side switch  
BUK200-50Y  
DESCRIPTION  
QUICK REFERENCE DATA  
Monolithic temperature and  
SYMBOL  
PARAMETER  
MIN.  
UNIT  
overload protected power switch  
based on MOSFET technology in a  
5 pin plastic envelope, configured  
as a single high side switch.  
IL  
Nominal load current (ISO)  
3.5  
A
SYMBOL  
PARAMETER  
MAX.  
UNIT  
APPLICATIONS  
VBG  
IL  
Continuous off-state supply voltage  
Continuous load current  
Continuous junction temperature  
On-state resistance  
50  
10  
150  
100  
V
A
˚C  
m  
General controller for driving  
lamps, motors, solenoids, heaters.  
Tj  
RON  
FEATURES  
FUNCTIONAL BLOCK DIAGRAM  
Vertical power DMOS switch  
Low on-state resistance  
5 V logic compatible input  
Overtemperature protection -  
self resets with hysteresis  
Overload protection against  
short circuit load with  
output current limiting;  
latched - reset by input  
High supply voltage load  
protection  
Supply undervoltage lock out  
Status indication for overload  
protection activated  
Diagnostic status indication  
of open circuit load  
BATT  
STATUS  
POWER  
MOSFET  
INPUT  
CONTROL &  
PROTECTION  
CIRCUITS  
LOAD  
Very low quiescent current  
Voltage clamping for turn off of  
inductive loads  
GROUND  
RG  
ESD protection on all pins  
Reverse battery and  
overvoltage protection  
Fig.1. Elements of the TOPFET HSS with internal ground resistor.  
PINNING - SOT263  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
Ground  
tab  
B
I
2
Input  
TOPFET  
HSS  
G
L
3
Battery (+ve supply)  
Status  
S
1 2 3 4 5  
leadform  
263-01  
4
5
Load  
Fig. 2.  
Fig. 3.  
tab connected to pin 3  
April 1995  
1
Rev 1.000  

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