Datasheet > BUK149-50DL

BUK149-50DL

更新时间： 2024-09-25 19:54:43

品牌	Logo	应用领域
飞利浦 - PHILIPS		/
页数	文件大小	规格书
6页	37K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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中文翻译

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技术参数
数据手册

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BUK149-50DL 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	配置：	Single
最大漏极电流 (Abs) (ID)：	16 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e0	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	65 W	子类别：	FET General Purpose Power
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

BUK149-50DL 数据手册

Philips Semiconductors

Product specification

Logic level TOPFET

BUK149-50DL

DESCRIPTION

QUICK REFERENCE DATA

Monolithic temperature and

overload protected logic level power

MOSFET in TOPFET2 technology

assembled in a 3 pin plastic

package.

SYMBOL

PARAMETER

MAX.

UNIT

V_DS

I_D

P_D

T_j

Continuous drain source voltage

Continuous drain current

Total power dissipation

Continuous junction temperature

150

˚C

APPLICATIONS

R_DS(ON)

I_ISL

Drain-source on-state resistance

mΩ

µA

General purpose switch for driving

Input supply current

V_IS= 5 V

650

lamps

motors

solenoids

heaters

in automotive systems and other

applications.

FEATURES

FUNCTIONAL BLOCK DIAGRAM

TrenchMOS output stage

Current limiting

Overload protection

DRAIN

Overtemperature protection

Protection latched reset by input

5 V logic compatible input level

Control of output stage and

supply of overload protection

circuits derived from input

Low operating input current

permits direct drive by

O / V

CLAMP

POWER

INPUT

MOSFET

RIG

micro-controller

ESD protection on all pins

Overvoltage clamping for turn

off of inductive loads

LOGIC AND

PROTECTION

SOURCE

Fig.1. Elements of the TOPFET.

PINNING - SOT226

PIN CONFIGURATION

SYMBOL

tab

DESCRIPTION

TOPFET

input

drain

source

tab drain

May 2001

Rev 1.100

12 3 4 5 6

中文翻译

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