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BU9844GUL-W PDF预览

BU9844GUL-W

更新时间: 2024-02-21 19:27:39
品牌 Logo 应用领域
罗姆 - ROHM /
页数 文件大小 规格书
13页 181K
描述
Silicon Monolithic Integrated Circuit

BU9844GUL-W 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:BGA
包装说明:ROHS COMPLIANT, WLCSP-6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.79
最大时钟频率 (fCLK):0.4 MHzJESD-30 代码:R-PBGA-B6
JESD-609代码:e1长度:1.84 mm
内存密度:16384 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:6字数:2048 words
字数代码:2000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:2KX8封装主体材料:PLASTIC/EPOXY
封装代码:VFBGA封装形状:RECTANGULAR
封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:0.55 mm串行总线类型:I2C
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:BALL
端子节距:0.5 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:1.6 mm
最长写入周期时间 (tWC):5 msBase Number Matches:1

BU9844GUL-W 数据手册

 浏览型号BU9844GUL-W的Datasheet PDF文件第5页浏览型号BU9844GUL-W的Datasheet PDF文件第6页浏览型号BU9844GUL-W的Datasheet PDF文件第7页浏览型号BU9844GUL-W的Datasheet PDF文件第9页浏览型号BU9844GUL-W的Datasheet PDF文件第10页浏览型号BU9844GUL-W的Datasheet PDF文件第11页 
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◇DEVICE OPERATION  
○START CONDITION (RECOGNITION OF START BIT)  
・All commands are proceeded by the start condition, which is a HIGH to LOW transition  
of SDA when SCL is HIGH.  
・The device continuously monitors the SDA and SCL lines for the start condition and  
will not respond to any command until this condition has been met.  
(See Fig.-4 SYNCHRONOUS DATA TIMING)  
○STOP CONDITION (RECOGNITION OF STOP BIT)  
・All commands must be terminated by a stop condition, which is a LOW to HIGH  
transition of SDA when SCL is HIGH.  
(See Fig.-4 SYNCHRONOUS DATA TIMING)  
○NOTICE ABOUT WRITE COMMAND  
・In the case that stop condition is not excuted in WRITE mode, transfered data will not  
be written in a memory.  
○DEVICE ADDRESSING  
・Following a START condition, the master output the slave address to be accessed.  
・The most significant four bits of the slave address are the device type indentifier,”  
for this device it is fixed as 1010.”  
・The next three bits (P2,P1,P0) are used by the master to select eight 256 word page  
of memory.  
P2,P1,P0 set to ‘0’‘0’‘0’ ・ ・ ・ 1page(000~0FF)  
P2,P1,P0 set to ‘0’‘0’‘1’ ・ ・ ・ 2page(100~1FF)  
P2,P1,P0 set to ‘1’‘1’‘1’ ・ ・ ・ 8page(700~7FF)  
・The last bit of the stream (R/W … READ/WRITE) determines the operation to be  
performed. When set to 1, a read operation is selected ; when set to 0, a write  
operation is selected.  
R/W set to 0・ ・ ・ ・ ・ ・ ・ ・ WRITE (including word address input of Random Read)  
R/W set to 1・ ・ ・ ・ ・ ・ ・ ・ READ  
1 0 1 0  
P2  
P1  
P0  
R/W  
○WRITE PROTECT (WP)  
When WP pin set to VCC(H level), write protect is set for 2,048 words (all address).  
When WP pin set to GND(L level), it is enable to write 2,048 words (all address).  
Either control this pin or connect to GND ( or Vcc). It is inhibited from being left  
unconnected.  
REV. B  

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