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BU9832GUL-WE2 PDF预览

BU9832GUL-WE2

更新时间: 2024-01-19 00:30:48
品牌 Logo 应用领域
罗姆 - ROHM 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
19页 504K
描述
WL-CSP EEPROM family SPI BUS

BU9832GUL-WE2 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:BGA
包装说明:ROHS COMPLIANT, VCSP-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51Factory Lead Time:11 weeks
风险等级:5.75最大时钟频率 (fCLK):5 MHz
数据保留时间-最小值:40耐久性:1000000 Write/Erase Cycles
JESD-30 代码:R-PBGA-B8长度:2.09 mm
内存密度:8192 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:8字数:1024 words
字数代码:1000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:1KX8封装主体材料:PLASTIC/EPOXY
封装代码:VFBGA封装等效代码:BGA8,3X3,20
封装形状:RECTANGULAR封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH
并行/串行:SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
电源:2/5 V认证状态:Not Qualified
座面最大高度:0.55 mm串行总线类型:SPI
最大待机电流:0.000002 A子类别:EEPROMs
最大压摆率:0.003 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.8 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:BALL
端子节距:0.5 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:1.85 mm
最长写入周期时间 (tWC):5 ms写保护:HARDWARE
Base Number Matches:1

BU9832GUL-WE2 数据手册

 浏览型号BU9832GUL-WE2的Datasheet PDF文件第6页浏览型号BU9832GUL-WE2的Datasheet PDF文件第7页浏览型号BU9832GUL-WE2的Datasheet PDF文件第8页浏览型号BU9832GUL-WE2的Datasheet PDF文件第10页浏览型号BU9832GUL-WE2的Datasheet PDF文件第11页浏览型号BU9832GUL-WE2的Datasheet PDF文件第12页 
Technical Note  
BU9832GUL-W  
2. Read command (READ)  
CS  
~  
~  
~  
~  
~  
~  
0
1
2
3
4
5
6
7
8
23  
24  
30  
SCK  
SI  
~  
~  
0
0
0
0
0
0
1
1
*
*
A9  
A1 A0  
~  
*
~  
~  
~  
High-Z  
~  
~  
SO  
D7 D6  
D2 D1 D0  
=Don't Care  
Fig.37 Read command  
By read command, data of EEPROM can be read. As for this command, set CS LOW, then input address after read ope  
code. EEPROM starts data output of the designated address. Data output is started from SCK fall of 15 clock, and from D7  
to D0 sequentially. This IC has increment read function. After output of data for 1 byte (8bits), by continuing input of SCK,  
data of the next address can be read. Increment read can read all the addresses of EEPROM. After reading data of the  
most significant address, by continuing increment read, data of the most insignificant address is read.  
3. Write command (WRITE)  
CS  
~  
~  
~  
~  
~  
~  
0
1
2
3
4
5
6
7
8
23  
24  
30  
31  
SCK  
~  
~  
~  
0
0
0
0
0
0
1
0
A9  
A1  
A0  
D7 D6  
D2  
~  
D1  
D0  
SI  
*
*
*
~  
High-Z  
~  
~  
SO  
=Don't Care  
Fig.38 Write command  
By write command, data of EEPROM can be written. As for this command, set CS LOW, then input address and data  
after write ope code. Then, by making CS HIGH, the EEPROM starts writing. The write time of EEPROM requires time of  
tE/W (Max 5ms). During tE/W, other than status read command is not accepted. Start CS after taking the last data (D0),  
and before the next SCK clock starts. At other timing, write command is not executed, and this write command is cancelled.  
This IC has page write function, and after input of data for 1 byte (8 bits), by continuing data input without starting CS ,  
data up to 16 bytes can be written for one tE/W. In page write, the insignificant 4 bit of the designated address is  
incremented internally at every time when data of 1 byte is input and data is written to respective addresses. When data of  
the maximum bytes or higher is input, address rolls over, and previously input data is overwritten.  
www.rohm.com  
© 2010 ROHM Co., Ltd. All rights reserved.  
2010.10 - Rev.A  
9/18  

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