Datasheet > BU52092GWZ

BU52092GWZ

更新时间： 2023-09-03 20:25:21

品牌	Logo	应用领域
罗姆 - ROHM		手机智能手机电脑
页数	文件大小	规格书
17页	901K
描述
两极检测霍尔IC用于检测S极或N极的磁场。通过组合本霍尔IC和磁铁，可以实现平板电脑和智能手机的盖开闭检测功能等。

阅读下载

获取价格

如果您发现信息不准确，欢迎纠错

BU52092GWZ 数据手册

BU52092GWZ

Operational Notes – continued

11. Unused Input Pins

Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and

extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small

charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and

cause unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the

power supply or ground line.

12. Regarding the Input Pin of the IC

In the construction of this IC, P-N junctions are inevitably formed creating parasitic diodes or transistors. The operation

of these parasitic elements can result in mutual interference among circuits, operational faults, or physical damage.

Therefore, conditions which cause these parasitic elements to operate, such as applying a voltage to an input pin

lower than the ground voltage should be avoided. Furthermore, do not apply a voltage to the input pins when no power

supply voltage is applied to the IC. Even if the power supply voltage is applied, make sure that the input pins have

voltages within the values specified in the electrical characteristics of this IC.

13. Ceramic Capacitor

When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with

temperature and the decrease in nominal capacitance due to DC bias and others.

14. Area of Safe Operation (ASO)

Operate the IC such that the output voltage, output current, and the maximum junction temperature rating are all within

the Area of Safe Operation (ASO).

15. Disturbance light

In a device where a portion of silicon is exposed to light such as in a WL-CSP, IC characteristics may be affected due

to photoelectric effect. For this reason, it is recommended to come up with countermeasures that will prevent the chip

from being exposed to light.

www.rohm.com

TSZ02201-0M2M0F416020-1-2

8.Aug.2016 Rev.001

11/14

TSZ22111 • 15 • 001

1...8 9 101112 13 14...17

下载PDF

型号	品牌	描述	获取价格	数据表
BU52092GWZ-E2	ROHM	Hall Effect Sensor, 1.2mT Min, 3.2mT Max, 0.2-1.6V, Square, Surface Mount, UCSP-4	获取价格
BU52095GWZ	ROHM	两极检测霍尔IC用于检测S极或N极的磁场。通过组合本霍尔IC和磁铁，可以实现平板电脑和智能	获取价格
BU52097GWZ	ROHM	两极检测霍尔IC用于检测S极或N极的磁场。通过组合本霍尔IC和磁铁，可以实现平板电脑和智能	获取价格
BU52098GWZ	ROHM	两极检测霍尔IC用于检测S极或N极的磁场。通过组合本霍尔IC和磁铁，可以实现平板电脑和智能	获取价格
BU52098GWZ-E2	ROHM	Hall Effect Sensor,	获取价格
BU520XX_BD7411G_REVF	ROHM	Omnipolar detection, Micro power operation (small current using intermittent operation met	获取价格