是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | BGA4,2X2,16 | Reach Compliance Code: | compliant |
风险等级: | 2.32 | 其他特性: | CMOS OUTPUT |
主体宽度: | 0.8 mm | 主体高度: | 0.4 mm |
主体长度或直径: | 0.8 mm | 滞后: | 1.6 mT |
最大磁场范围: | 27.5 mT | 最小磁场范围: | 18.9 mT |
安装特点: | SURFACE MOUNT | 轴数: | 1 |
端子数量: | 4 | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 输出电路类型: | TRANSISTOR |
最大输出电流: | 0.5 mA | 输出范围: | 0.2-1.6V |
输出类型: | VOLTAGE OUTPUT | 封装主体材料: | PLASTIC/EPOXY |
封装等效代码: | BGA4,2X2,16 | 封装形状/形式: | SQUARE |
传感器/换能器类型: | MAGNETIC FIELD SENSOR,HALL EFFECT | 最大供电电压: | 3.6 V |
最小供电电压: | 1.65 V | 表面贴装: | YES |
端接类型: | SOLDER | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BU520XX_BD7411G_REVF | ROHM |
获取价格 |
Omnipolar detection, Micro power operation (small current using intermittent operation met | |
BU52177GXZ-E2 | ROHM |
获取价格 |
Hall Effect Sensor, 10.1mT Min, 19mT Max, 0.2-1.6V, Square, Surface Mount, XCSP-4 | |
BU522 | ISC |
获取价格 |
Silicon Darlington NPN Power Transistor | |
BU52216 | MOTOROLA |
获取价格 |
7A, 375V, NPN, Si, POWER TRANSISTOR, TO-220AB | |
BU52216A | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 7A I(C), 375V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
BU52271NUZ-ZE2 | ROHM |
获取价格 |
Hall Effect Sensor, | |
BU52272NUZ | ROHM |
获取价格 |
BU52272NUZ具备S极检测用和N极检测用2种输出,因此可进行极性判别。若使用双极检测 | |
BU52272NUZ-ZE2 | ROHM |
获取价格 |
Hall Effect Sensor, 1.2mT Min, 3.2mT Max, 0.2-1.6V, Rectangular, Surface Mount, VSON-4 | |
BU52273NUZ | ROHM |
获取价格 |
Omnipolar Detection Hall IC | |
BU52273NUZ-ZE2 | ROHM |
获取价格 |
Omnipolar Detection Hall IC |