型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BU52098GWZ-E2 | ROHM |
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Hall Effect Sensor, | |
BU520XX_BD7411G_REVF | ROHM |
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Omnipolar detection, Micro power operation (small current using intermittent operation met | |
BU52177GXZ-E2 | ROHM |
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Hall Effect Sensor, 10.1mT Min, 19mT Max, 0.2-1.6V, Square, Surface Mount, XCSP-4 | |
BU522 | ISC |
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Silicon Darlington NPN Power Transistor | |
BU52216 | MOTOROLA |
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7A, 375V, NPN, Si, POWER TRANSISTOR, TO-220AB | |
BU52216A | MOTOROLA |
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Power Bipolar Transistor, 7A I(C), 375V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
BU52271NUZ-ZE2 | ROHM |
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Hall Effect Sensor, | |
BU52272NUZ | ROHM |
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BU52272NUZ具备S极检测用和N极检测用2种输出,因此可进行极性判别。若使用双极检测 | |
BU52272NUZ-ZE2 | ROHM |
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Hall Effect Sensor, 1.2mT Min, 3.2mT Max, 0.2-1.6V, Rectangular, Surface Mount, VSON-4 | |
BU52273NUZ | ROHM |
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Omnipolar Detection Hall IC |