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BU52092GWZ-E2 PDF预览

BU52092GWZ-E2

更新时间: 2024-11-09 21:12:35
品牌 Logo 应用领域
罗姆 - ROHM 输出元件传感器换能器
页数 文件大小 规格书
18页 855K
描述
Hall Effect Sensor, 1.2mT Min, 3.2mT Max, 0.2-1.6V, Square, Surface Mount, UCSP-4

BU52092GWZ-E2 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantFactory Lead Time:14 weeks
风险等级:1.75主体宽度:0.8 mm
主体高度:0.4 mm主体长度或直径:0.8 mm
滞后:0.4 mT最大磁场范围:3.2 mT
最小磁场范围:1.2 mT安装特点:SURFACE MOUNT
最大工作电流:0.008 mA最高工作温度:85 °C
最低工作温度:-40 °C输出范围:0.2-1.6V
输出类型:VOLTAGE OUTPUT封装形状/形式:SQUARE
传感器/换能器类型:MAGNETIC FIELD SENSOR,HALL EFFECT最大供电电压:3.6 V
最小供电电压:1.65 V表面贴装:YES
端接类型:SOLDERBase Number Matches:1

BU52092GWZ-E2 数据手册

 浏览型号BU52092GWZ-E2的Datasheet PDF文件第2页浏览型号BU52092GWZ-E2的Datasheet PDF文件第3页浏览型号BU52092GWZ-E2的Datasheet PDF文件第4页浏览型号BU52092GWZ-E2的Datasheet PDF文件第5页浏览型号BU52092GWZ-E2的Datasheet PDF文件第6页浏览型号BU52092GWZ-E2的Datasheet PDF文件第7页 
Datasheet  
Omnipolar Detection Hall IC  
BU52092GWZ  
General Description  
Key Specifications  
The omnipolar detection Hall IC is magnetic switch that  
can operate both S-and N-pole.  
This Hall IC product can be in tablets, smart phones, and  
other applications in order to detect open and close of  
the cover.  
VDD Voltage Range:  
Operate Point:  
Hysteresis:  
Period:  
Average Supply Current:  
Output Type:  
1.65V to 3.6V  
±2.4mT(Typ)  
0.4mT(Typ)  
50ms(Typ)  
4.4µA (Typ)  
CMOS  
Operating Temperature Range:  
-40°C to +85°C  
Features  
Omnipolar Detection  
Package  
UCSP35L1  
W(Typ) x D(Typ) x H(Max)  
0.80mm x 0.80mm x 0.40mm  
Micro Power Operation (Small Current Using  
Intermittent Operation Method)  
Ultra-compact Package  
Applications  
Tablets, Smart Phones, Notebook Computers,  
Digital Video Cameras, Digital Still Cameras, etc.  
Typical Application Circuit, and Block Diagram  
VDD  
0.1µF  
Adjust the bypass capacitor value  
as necessary, according to voltage  
noise conditions, etc.  
TIMING  
LOGIC  
HALL  
ELEMENT  
×
OUT  
GND  
Pin Descriptions  
Pin Configurations  
TOP VIEW  
(pads not visible)  
Pin No. Pin Name  
Function  
A1 A2  
A1  
A2  
B1  
B2  
GND  
NC  
Ground  
Non Connect  
Power supply  
Output  
VDD  
B1 B2  
OUT  
Product structure : Silicon monolithic integrated circuit This product has no designed protection against radioactive rays  
.www.rohm.com  
TSZ02201-0M2M0F416020-1-2  
8.Aug.2016 Rev.001  
© 2016 ROHM Co., Ltd. All rights reserved.  
1/14  
TSZ22111 14 001  
 
 
 
 
 
 
 
 

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