®
PROFET
BTS621L1
Smart Two Channel Highside Power Switch
Features
Product Summary
•
Overload protection
Overvoltage protection Vbb(AZ)
43
V
•
•
•
•
•
•
•
Current limitation
V
5.0 ... 34 V
Short circuit protection
Operating voltage
bb(on)
Thermal shutdown
both
channels: each
parallel
Overvoltage protection (including load dump)
Fast demagnetization of inductive loads
On-state resistance RON
Load current (ISO)
Current limitation
100
4.4
8
50
8.5
8
mΩ
A
1
)
Reverse battery protection
IL(ISO)
IL(SCr)
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
A
•
•
•
•
•
Open drain diagnostic output
Open load detection in ON-state
CMOS compatible input
TO-220AB/7
Loss of ground and loss of V protection
Electrostatic discharge (ESD) protection
bb
7
7
7
1
1
1
Application
Straight leads
SMD
Standard
•
µC compatible power switch with diagnostic
feedback for 12 V and 24 V DC grounded loads
•
•
All types of resistive, inductive and capacitve loads
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
+ V
bb
4
Current
limit 1
Gate 1
Voltage
source
Overvoltage
protection
protection
V
Logic
OUT1
Limit for
Level shifter
Rectifier 1
Voltage
sensor
unclamped
ind. loads 1
1
7
Temperature
sensor 1
3
6
IN1
IN2
Charge
pump 1
Open load
Short to Vbb
detection 1
Logic
ESD
Charge
pump 2
5
Gate 2
protection
ST
Current
limit 2
OUT2
R
Level shifter
Rectifier 2
Limit for
unclamped
ind. loads 2
Load
Temperature
sensor 2
Open load
R
O1
O2
Short to Vbb
GND
detection 2
GND
PROFET
2
Signal GND
Load GND
1)
With external current limit (e.g. resistor R
=150 Ω) in GND connection, resistor in series with ST
GND
connection, reverse load current limited by connected load.
Semiconductor Group
1 of 15
2003-Oct-01