®
PROFET
BTS621L1
Parameter and Conditions, each channel
Symbol
Values
Unit
at Tj = 25 °C, V = 12 V unless otherwise specified
bb
min
typ
max
Operating Parameters
Operating voltage6)
Undervoltage shutdown
Undervoltage restart
T =-40...+150°C: Vbb(on)
5.0
3.5
--
--
--
--
34
V
V
V
j
T =-40...+150°C: Vbb(under)
5.0
j
T =-40...+25°C: Vbb(u rst)
5.0
j
T =+150°C:
j
7.0
Undervoltage restart of charge pump
Vbb(ucp)
5.6
0.2
7.0
--
V
V
--
--
see diagram page 13
T =-40...+150°C:
j
Undervoltage hysteresis
∆Vbb(under)
∆Vbb(under) = Vbb(u rst) - Vbb(under)
Overvoltage shutdown
Overvoltage restart
Overvoltage hysteresis
Overvoltage protection7)
Ibb=40 mA
T =-40...+150°C: Vbb(over)
34
33
--
--
--
0.5
47
43
--
--
--
V
V
V
V
j
T =-40...+150°C: Vbb(o rst)
j
T =-40...+150°C: ∆Vbb(over)
j
T =-40...+150°C: Vbb(AZ)
42
j
Standby current (pin 4)
VIN=0
Ibb(off)
--
--
--
14
17
--
30
35
12
µA
µA
Tj=-40...+25°C:
Tj= 150°C:
IL(off)
Leakage output current (included in Ibb(off)
)
VIN=0
Operating current (Pin 2)8), VIN=5 V
both channels on, Tj =-40...+150°C
Operating current (Pin 2)8)
IGND
IGND
--
--
4
2
6
3
mA
mA
one channel on, Tj =-40...+150°C:
6)
7)
8)
At supply voltage increase up to V = 5.6 V typ without charge pump, V
≈V - 2 V
bb
bb
OUT
See also V
in table of protection functions and circuit diagram page 8.
ON(CL)
Add I , if I > 0, add I , if V >5.5 V
ST
ST
IN
IN
Semiconductor Group
4
2003-Oct-01