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BTS640S2 PDF预览

BTS640S2

更新时间: 2024-11-20 22:39:43
品牌 Logo 应用领域
英飞凌 - INFINEON 开关接口集成电路电源开关驱动局域网
页数 文件大小 规格书
15页 240K
描述
Smart Sense High-Side Power Switch

BTS640S2 技术参数

生命周期:Obsolete零件包装代码:SFM
包装说明:ZIP, ZIP7,.15,.2TB针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.29
内置保护:OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE驱动器位数:1
接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码:R-PZFM-T7
功能数量:1端子数量:7
输出电流流向:SOURCE最大输出电流:4 A
标称输出峰值电流:50 A封装主体材料:PLASTIC/EPOXY
封装代码:ZIP封装等效代码:ZIP7,.15,.2TB
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
电源:12/24 V认证状态:Not Qualified
子类别:Peripheral Drivers最大供电电压:34 V
最小供电电压:5 V标称供电电压:12 V
表面贴装:NO技术:MOS
端子形式:THROUGH-HOLE端子节距:1.27 mm
端子位置:ZIG-ZAG断开时间:200 µs
接通时间:150 µsBase Number Matches:1

BTS640S2 数据手册

 浏览型号BTS640S2的Datasheet PDF文件第2页浏览型号BTS640S2的Datasheet PDF文件第3页浏览型号BTS640S2的Datasheet PDF文件第4页浏览型号BTS640S2的Datasheet PDF文件第5页浏览型号BTS640S2的Datasheet PDF文件第6页浏览型号BTS640S2的Datasheet PDF文件第7页 
®
PROFET BTS 640 S2  
Smart Sense High-Side  
Power Switch  
Features  
Product Summary  
Vbb(on)  
RON  
IL(ISO)  
IL(SCr)  
5.0 ... 34  
30  
V
mΩ  
A
Operating voltage  
On-state resistance  
Load current (ISO)  
Current limitation  
Short circuit protection  
12.6  
24  
Current limitation  
Proportional load current sense  
CMOS compatible input  
Open drain diagnostic output  
Fast demagnetization of inductive loads  
Undervoltage and overvoltage shutdown with  
auto-restart and hysteresis  
Overload protection  
A
Package  
TO220-7-11  
TO263-7-2  
TO220-7-12  
1
1
1
Thermal shutdown  
Standard (staggered)  
SMD  
Straight  
Overvoltage protection including load dump (with  
external GND-resistor)  
Reverse battery protection (with external GND-resistor)  
Loss of ground and loss of V protection  
bb  
Electrostatic discharge (ESD) protection  
Application  
µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads  
All types of resistive, inductive and capacitve loads  
Replaces electromechanical relays, fuses and discrete circuits  
General Description  
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic  
feedback, proportional sense of load current, monolithically integrated in Smart SIPMOS technology.  
Providing embedded protective functions.  
Block Diagram  
4
+ V  
bb  
Voltage  
source  
Gate  
protection  
Overvoltage  
protection  
Current  
limit  
V
Logic  
6, 7  
OUT  
Limit for  
Charge pump  
Level shifter  
Voltage  
sensor  
unclamped  
ind. loads  
I
L
Current  
Sense  
Rectifier  
IN  
3
1
Output  
Voltage  
detection  
Load  
Logic  
ESD  
ST  
R
O
Temperature  
sensor  
GND  
IS  
5
I
IS  
PROFET  
GND  
R
IS  
Load GND  
2
Signal GND  
Semiconductor Group  
Page 1 of 15  
2003-Oct-01  

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