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BTS621L1E3230 PDF预览

BTS621L1E3230

更新时间: 2024-11-04 22:31:55
品牌 Logo 应用领域
英飞凌 - INFINEON 外围驱动器驱动程序和接口开关接口集成电路电源开关局域网
页数 文件大小 规格书
15页 337K
描述
Smart Two Channel Highside Power Switch

BTS621L1E3230 技术参数

生命周期:Obsolete零件包装代码:TO-220AB
包装说明:, SIP7,.1,50TB针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.3
Is Samacsys:N内置保护:TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE
驱动器位数:2接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码:R-PSFM-T7功能数量:2
端子数量:7输出电流流向:SOURCE
最大输出电流:3.5 A标称输出峰值电流:14 A
封装主体材料:PLASTIC/EPOXY封装等效代码:SIP7,.1,50TB
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
电源:12/24 V认证状态:Not Qualified
子类别:Peripheral Drivers最大供电电压:34 V
最小供电电压:5 V标称供电电压:12 V
表面贴装:NO技术:MOS
端子形式:THROUGH-HOLE端子节距:1.27 mm
端子位置:SINGLE断开时间:400 µs
接通时间:400 µsBase Number Matches:1

BTS621L1E3230 数据手册

 浏览型号BTS621L1E3230的Datasheet PDF文件第2页浏览型号BTS621L1E3230的Datasheet PDF文件第3页浏览型号BTS621L1E3230的Datasheet PDF文件第4页浏览型号BTS621L1E3230的Datasheet PDF文件第5页浏览型号BTS621L1E3230的Datasheet PDF文件第6页浏览型号BTS621L1E3230的Datasheet PDF文件第7页 
®
PROFET  
BTS621L1  
Smart Two Channel Highside Power Switch  
Features  
Product Summary  
Overload protection  
Overvoltage protection Vbb(AZ)  
43  
V
Current limitation  
V
5.0 ... 34 V  
Short circuit protection  
Operating voltage  
bb(on)  
Thermal shutdown  
both  
channels: each  
parallel  
Overvoltage protection (including load dump)  
Fast demagnetization of inductive loads  
On-state resistance RON  
Load current (ISO)  
Current limitation  
100  
4.4  
8
50  
8.5  
8
mΩ  
A
1
)
Reverse battery protection  
IL(ISO)  
IL(SCr)  
Undervoltage and overvoltage shutdown with  
auto-restart and hysteresis  
A
Open drain diagnostic output  
Open load detection in ON-state  
CMOS compatible input  
TO-220AB/7  
Loss of ground and loss of V protection  
Electrostatic discharge (ESD) protection  
bb  
7
7
7
1
1
1
Application  
Straight leads  
SMD  
Standard  
µC compatible power switch with diagnostic  
feedback for 12 V and 24 V DC grounded loads  
All types of resistive, inductive and capacitve loads  
Replaces electromechanical relays, fuses and discrete circuits  
General Description  
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic  
feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.  
+ V  
bb  
4
Current  
limit 1  
Gate 1  
Voltage  
source  
Overvoltage  
protection  
protection  
V
Logic  
OUT1  
Limit for  
Level shifter  
Rectifier 1  
Voltage  
sensor  
unclamped  
ind. loads 1  
1
7
Temperature  
sensor 1  
3
6
IN1  
IN2  
Charge  
pump 1  
Open load  
Short to Vbb  
detection 1  
Logic  
ESD  
Charge  
pump 2  
5
Gate 2  
protection  
ST  
Current  
limit 2  
OUT2  
R
Level shifter  
Rectifier 2  
Limit for  
unclamped  
ind. loads 2  
Load  
Temperature  
sensor 2  
Open load  
R
O1  
O2  
Short to Vbb  
GND  
detection 2  
GND  
PROFET  
2
Signal GND  
Load GND  
1)  
With external current limit (e.g. resistor R  
=150 ) in GND connection, resistor in series with ST  
GND  
connection, reverse load current limited by connected load.  
Semiconductor Group  
1 of 15  
2003-Oct-01  

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