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BTS620L1 PDF预览

BTS620L1

更新时间: 2024-11-20 22:36:51
品牌 Logo 应用领域
英飞凌 - INFINEON 开关电源开关过载保护
页数 文件大小 规格书
12页 142K
描述
Smart Two Channel Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown)

BTS620L1 技术参数

生命周期:Obsolete零件包装代码:TO-220AB
包装说明:TO-220AB, 7 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.37
内置保护:TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE驱动器位数:2
接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码:R-PZFM-T7
功能数量:2端子数量:7
输出电流流向:SINK最大输出电流:3.5 A
标称输出峰值电流:4.4 A封装主体材料:PLASTIC/EPOXY
封装代码:ZIP封装等效代码:ZIP7,.15,.2TB
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
电源:12 V认证状态:Not Qualified
子类别:Peripheral Drivers最大供电电压:34 V
最小供电电压:5 V标称供电电压:12 V
表面贴装:NO技术:MOS
端子形式:THROUGH-HOLE端子节距:1.27 mm
端子位置:ZIG-ZAG断开时间:400 µs
接通时间:400 µsBase Number Matches:1

BTS620L1 数据手册

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®
PROFET BTS 620 L1  
Smart Two Channel Highside Power Switch  
Features  
Product Summary  
Overload protection  
Overvoltage protection Vbb(AZ)  
43  
V
Current limitation  
Short circuit protection  
Thermal shutdown  
Overvoltage protection (including load dump)  
Reverse battery protection  
V
5.0 ... 24 V  
both  
parallel  
Operating voltage  
bb(on)  
channels: each  
1
)
On-state resistance RON  
Load current (ISO) IL(ISO)  
Current limitation  
100  
4.4  
10  
50  
8.5  
10  
m  
A
Undervoltage and overvoltage shutdown with  
auto-restart and hysteresis  
IL(SCr)  
A
Open drain diagnostic output  
Open load detection in ON-state  
CMOS compatible input  
Loss of ground and loss of V protection  
Electrostatic discharge (ESD) protection  
TO-220AB/7  
bb  
Application  
7
1
µC compatible power switch with diagnostic  
Standard  
feedback for 12 V DC grounded loads  
Most suitable for resistive and lamp loads  
General Description  
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic  
feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection  
functions.  
+ V  
bb  
4
Curre nt  
lim it 1  
G a te 1  
p ro te c tio n  
Vo lta g e  
so urc e  
Ove rvo lta g e  
p ro te c tio n  
V
Logic  
OUT1  
Le ve l shifte r  
Re c tifie r 1  
Volta g e  
se nso r  
1
Te m p e ra ture  
se nso r 1  
3
6
IN1  
IN2  
Cha rg e  
p um p 1  
Op e n lo a d  
Sho rt to Vb b  
d e te c tio n 1  
Log ic  
ESD  
Cha rg e  
p um p 2  
5
G a te 2  
p ro te c tio n  
ST  
Curre nt  
lim it 2  
OUT2  
Le ve l shifte r  
Re c tifie r 2  
7
Load  
Te m p e ra ture  
se nso r 2  
Op e n lo a d  
Sho rt to Vb b  
d e te c tio n 2  
R
R
O1  
O2  
GND  
GND  
PROFET  
2
Signal GND  
Load GND  
1)  
With external current limit (e.g. resistor R =150 ) in GND connection, resistor in series with ST  
GND  
connection, reverse load current limited by connected load.  
Semiconductor Group  
1
12.96  

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