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BT258_SERIES

更新时间： 2024-09-24 23:35:55

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Thyristors logic level

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BT258_SERIES 数据手册

Philips Semiconductors

Product specification

Thyristors

logic level

BT258 series

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Passivated, sensitive gate thyristors

in a plastic envelope, intended for use

in general purpose switching and

phase control applications. These

devices are intended to be interfaced

directly to microcontrollers, logic

integrated circuits and other low

power gate trigger circuits.

SYMBOL PARAMETER

MAX. MAX. MAX. UNIT

BT258- 500R 600R 800R

V_DRM

V_RRM

I_T(AV)

Repetitive peak off-state

500

600

800

voltages

Average on-state current

RMS on-state current

Non-repetitive peak on-state

current

I_T(RMS)

I_TSM

PINNING - TO220AB

PIN CONFIGURATION

SYMBOL

DESCRIPTION

cathode

tab

anode

gate

1 2 3

tab anode

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

-500R -600R -800R

V_DRM, V_RRMRepetitive peak off-state

voltages

500¹

600¹

800

I_T(AV)

I_T(RMS)

I_TSM

Average on-state current half sine wave; T_mb≤ 111 ˚C

RMS on-state current

Non-repetitive peak

on-state current

all conduction angles

half sine wave; T_j= 25 ˚C prior to

surge

t = 10 ms

t = 8.3 ms

t = 10 ms

I_TM= 10 A; I_G= 50 mA;

dI_G/dt = 50 mA/µs

I²t

dI_T/dt

I²t for fusing

Repetitive rate of rise of

on-state current after

triggering

A²s

A/µs

I_GM

Peak gate current

Peak reverse gate voltage

Peak gate power

Average gate power

Storage temperature

Operating junction

temperature

0.5

150

125²

˚C

V_RGM

P_GM

P_G(AV)

T_stg

over any 20 ms period

-40

T_j

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may

switch to the on-state. The rate of rise of current should not exceed 15 A/µs.

2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.

October 2002

Rev 2.000

12 3 4 5 6

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与BT258_SERIES相关器件

型号	品牌	获取价格	描述	数据表
BT258-500R	NXP	获取价格	Thyristors logic level
BT258-500R	WEEN	获取价格	Passivated, sensitive gate thyristors in a plastic envelope, intended for use in general p
BT258-600R	NXP	获取价格	Thyristors logic level
BT258-600R	WEEN	获取价格	Passivated, sensitive gate thyristors in a plastic envelope, intended for use in general p
BT258-600R,127	NXP	获取价格	BT258-600R
BT258-800R	NXP	获取价格	Thyristors logic level
BT258-800R	WEEN	获取价格	Passivated, sensitive gate thyristors in a plastic envelope, intended for use in general p
BT258-800R,127	NXP	获取价格	BT258-800R
BT258B	NXP	获取价格	Thyristors logic level
BT258B-500R	NXP	获取价格	Thyristors logic level