Datasheet > BT258S-800LT

BT258S-800LT

更新时间： 2024-04-09 19:02:39

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
12页	403K
描述
Passivated sensitive gate Silicon Controlled Rectifier (SCR) in a SOT428 (DPAK) surface mountable

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BT258S-800LT 数据手册

BT258S-800LT

SCR logic level, high temperature

5 September 2018

Product data sheet

1. General description

Passivated sensitive gate Silicon Controlled Rectifier (SCR) in a SOT428 (DPAK) surface

mountable plastic package intended for use in applications requiring high bidirectional blocking

voltage capability and high thermal cycling performance. These devices are intended to be

interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger

circuits.

2. Features and benefits

•

Direct interfacing with low power drivers and microcontrollers

•

High bidirectional blocking voltage capability

High junction operating temperature capability

High thermal cycling performance

Planar passivated for voltage ruggedness and reliability

Surface mountable package

Very sensitive gate for logic level controls

3. Applications

•

General purpose switching and phase control

Ignition circuits, CDI for 2- and 3-wheelers

Motor control - e.g. small kitchen appliances

Protection circuits for Switched-Mode Power Supplies (SMPS)

Protection circuits in lighting ballasts

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RRM

repetitive peak reverse

voltage

800

I_T(AV)

I_T(RMS)

I_TSM

average on-state

current

half sine wave; T_mb≤ 135 °C; Fig. 1

RMS on-state current

half sine wave; T_mb≤ 135 °C; Fig. 2;

Fig. 3

non-repetitive peak on- half sine wave; T_j(init)= 25 °C;

state current

150

t_p= 10 ms; Fig. 4; Fig. 5

half sine wave; T_j(init)= 25 °C;

t_p= 8.3 ms

T_j

junction temperature

[1]

°C

Static characteristics

12 3 4 5 6 7...12

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