Datasheet > BT169DW

BT169DW

更新时间： 2024-06-27 12:12:19

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	74K
描述
Thyristors Logic Level

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中文翻译

获取价格

数据手册

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BT169DW 数据手册

SMD Type

Thyristor

Thyristors logic level

BT169DW

SOT-223

Unit: mm

+0.2

3.50

-0.2

+0.2

6.50

-0.2

Features

+0.2

0.90

-0.2

+0.1

3.00

-0.1

+0.3

7.00

-0.3

Designed to be interfaced directly to microcontrollers,

logic integrated circuits and other low power gate trigger circuits

1 cathode

2 anode

3 gate

+0.1

0.70

-0.1

2.9

4 anode

4.6

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

V^DRM, V^RRM

I^T(AV)

Rating

400

0.63

Unit

repetitive peak off-state voltages

average on-state current half sine wave;T^lead

RMS on-state current all conduction angles

non-repetitive peak on-state current t = 10 ms

I^T(RMS)

I^TSM

(all conduction angles; T^j= 25

I²t for fusing

)

t = 8.3 ms

t = 10 ms

A²s

I^2t

d^IT/d^t

I^GM

0.32

repetitive rate of rise of on-state current after triggering *

peak gate current

peak gate voltage

V^GM

VRGM

P^GM

P^G(AV)

T^stg

peak reverse gate voltage

peak gate power

average gate power (over any 20 ms period)

storage temperature

0.1

-40 to 150

125

junction temperature

T^j

thermal resistance from junction to ambient

R^th(j-a)

156

K/W

* I^TM= 2 A; I^G= 10 mA;dI^G/d^t= 100 mA/

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