BT169G

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BT169G 技术参数

BT169 series

Thyristors logic level

Rev. 04 — 23 August 2004

Product data sheet

1. Product proﬁle

1.1 General description

Passivated, sensitive gate thyristors in a SOT54 plastic package.

1.2 Features

■ Designed to be interfaced directly to microcontrollers, logic integrated circuits and

other low power gate trigger circuits.

1.3 Applications

■ General purpose switching and phase control applications.

1.4 Quick reference data

■ V_DRM, V_RRM≤ 200 V (BT169B)

■ V_DRM, V_RRM≤ 400 V (BT169D)

■ V_DRM, V_RRM≤ 600 V (BT169G)

■ I_T(RMS)≤ 0.8 A

■ I_T(AV)≤ 0.5 A

■ I_TSM≤ 8 A.

2. Pinning information

Table 1:

Discrete pinning

Description

anode (a)

gate (g)

Simpliﬁed outline

Symbol

cathode (k)

sym037

3 2 1

SOT54 (TO-92)

12 3 4 5 6 7...12

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型号	品牌	获取价格	描述	数据表
BT169G,112	NXP	获取价格	BT169G
BT169G,126	NXP	获取价格	BT169G
BT169G,162	NXP	获取价格	SILICON CONTROLLED RECTIFIER,600V V(DRM),500MA I(T),TO-92VAR
BT169G,176	NXP	获取价格	SILICON CONTROLLED RECTIFIER,600V V(DRM),500MA I(T),TO-92VAR
BT169G/DG,176	NXP	获取价格	SILICON CONTROLLED RECTIFIER,600V V(DRM),500MA I(T),TO-92VAR
BT169G-L	NXP	获取价格	0.8 A, 600 V, SCR, TO-92, PLASTIC, SC-43A, 3 PIN
BT169G-L	WEEN	获取价格	Planar passivated very sensitive gate Silicon Controlled Rectifier in a SOT54 (TO-92) plas
BT169G-L,412	NXP	获取价格	BT169G-L
BT169GL-T92-B	UTC	获取价格	SCRS
BT169GL-T92-K	UTC	获取价格	SCRS