Datasheet > BT169G

BT169G

更新时间： 2024-11-09 09:00:51

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描述
Thyristors logic level

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BT169G 数据手册

TIGER ELECTRONIC CO.,LTD

Product specification

BT169 series

Thyristors logic level

GENERAL DESCRIPTION

Passivated, sensitive gate thyristors ina plastic envelope, intended

foruse in general purpose switching and phase control applications.

These devices are intended to be interfaced directly to

microcontrollers, logic integrated circuits and other low power gate

trigger circuits.

ABSOLUTE MAXIMUM RATINGS ( Ta = 25 ^OC)

Typ

Parameter

Symbol

Unit

BT169D BT169G

Repetitive peak off-state

voltages

V_DRM

V_RRM

400

600

Average on-state current

RMS on-state current

I_T(AV)

0.5

0.8

I_T(RMS)

Non-repetitive peak

on-state current

I_TSM

8.0

Max. Operating Junction

Temperature

T_j

110

^oC

TO-92

Storage Temperature

T_stg

-45~150

( Ta = 25 ^OC)

ELECTRICAL CHARACTERISTICS

Typ

Parameter

Symbol

Test Conditions

Min

Max Unit

BT169D BT169G

Repetitive peak off-state voltage

V_DRM

V_RRM

400

600

—

Average on-state current

RMS on-state current

On-state voltage

I_T(AV)

half sine wave; T_mb< 103 ^oC

0.5

0.8

1.20

0.5

0.6

—

I_T(RMS)all conduction angles

V_T

I_H

I_T=1.0 A

1.35

Holding current

V_D=12 V; I_GT= 0.5 mA

V_D=12 V; I_T= 10 mA

Latching current

I_L

Gate trigger current

Gate trigger voltage

I_GT

V_GT

200

0.8

0.5

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