BT169EW

更新时间： 2024-01-30 10:29:41

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
7页	56K
描述
Thyristor logic level

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中文翻译

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技术参数
数据手册

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BT169EW 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.59	Is Samacsys：	N
触发设备类型：	SCR	Base Number Matches：	1

BT169EW 数据手册

Philips Semiconductors

Product specification

Thyristor

logic level

BT169W Series

GENERAL DESCRIPTION

QUICK REFERENCE DATA

SYMBOL PARAMETER

BT169

Glass passivated, sensitive gate

thyristorinaplasticenvelope,suitable

forsurfacemounting, intended foruse

in general purpose switching and

phase control applications. This

device is intended to be interfaced

directly to microcontrollers, logic

integrated circuits and other low

power gate trigger circuits.

MAX. MAX. MAX. MAX. UNIT

V_DRM

V_RRM

I_T(AV)

Repetitive peak

off-state voltages

Average on-state

current

200

400

500

600

0.5

I_T(RMS)

I_TSM

RMS on-state current

Non-repetitive peak

on-state current

0.8

PINNING - SOT223

PIN CONFIGURATION

SYMBOL

DESCRIPTION

cathode

anode

gate

tab anode

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_DRM, V_RRMRepetitive peak off-state

voltages

200¹

400¹

500¹

600¹

I_T(AV)

Average on-state current half sine wave;

_sp≤ 112 ˚C

0.63

I_T(RMS)

I_TSM

RMS on-state current

Non-repetitive peak

on-state current

all conduction angles

half sine wave;

T_j= 25 ˚C prior to surge

t = 10 ms

0.32

t = 8.3 ms

I²t

dI_T/dt

I²t for fusing

Repetitive rate of rise of

on-state current after

triggering

t = 10 ms

I_TM= 2 A; I_G= 10 mA;

dI_G/dt = 100 mA/µs

A²s

A/µs

I_GM

Peak gate current

Peak gate voltage

Peak reverse gate voltage

Peak gate power

Average gate power

Storage temperature

Operating junction

temperature

˚C

V_GM

V_RGM

P_GM

P_G(AV)

T_stg

over any 20 ms period

0.1

150

125

-40

T_j

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may

switch to the on-state. The rate of rise of current should not exceed 15 A/µs.

September 1997

Rev 1.200

12 3 4 5 6 7

中文翻译

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