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BT169G-L PDF预览

BT169G-L

更新时间: 2024-01-04 09:42:22
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
12页 281K
描述
0.8 A, 600 V, SCR, TO-92, PLASTIC, SC-43A, 3 PIN

BT169G-L 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:unknown
HTS代码:8541.30.00.80风险等级:5.59
其他特性:SENSITIVE GATE配置:SINGLE
最大直流栅极触发电流:0.05 mAJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED最大均方根通态电流:0.8 A
断态重复峰值电压:600 V重复峰值反向电压:600 V
表面贴装:NO端子面层:TIN
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:SCR
Base Number Matches:1

BT169G-L 数据手册

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BT169G-L  
2
9
-
TO  
SCR  
Rev. 2 — 10 November 2011  
Product data sheet  
1. Product profile  
1.1 General description  
Planar passivated very sensitive gate Silicon Controlled Rectifier in a SOT54 (TO-92)  
plastic package.  
1.2 Features and benefits  
Planar passivated for voltage  
Very sensitive gate  
ruggedness and reliability  
1.3 Applications  
Ignition circuits  
Protection / shut-down circuits: lighting  
ballasts  
Low power latching circuits  
Protection / shut-down circuits:  
Switched Mode Power Supplies  
1.4 Quick reference data  
Table 1.  
Symbol  
VDRM  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
600  
600  
8
Unit  
V
repetitive peak off-state voltage  
repetitive peak reverse voltage  
-
-
-
-
-
-
VRRM  
V
ITSM  
non-repetitive peak on-state current half sine wave; Tj(init) = 25 °C;  
A
tp = 10 ms; see Figure 4;  
see Figure 5  
IT(RMS)  
RMS on-state current  
half sine wave; Tlead 83 °C;  
see Figure 1; see Figure 2  
-
-
-
0.8  
50  
A
Static characteristics  
IGT  
gate trigger current  
VD = 12 V; IT = 10 mA; Tj = 25 °C;  
see Figure 7  
15  
µA  
IH  
IL  
holding current  
latching current  
VD = 12 V; Tj = 25 °C; see Figure 9  
-
-
0.4  
2
1
4
mA  
mA  
VD = 12 V; IG = 0.5 mA; Tj = 25 °C;  
see Figure 8  
 
 
 
 
 

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