Datasheet > BT134-D

BT134-D

更新时间： 2024-09-16 04:34:47

品牌	Logo	应用领域
SEMIWELL		/
页数	文件大小	规格书
6页	652K
描述
Bi-Directional Triode Thyristor

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BT134-D 数据手册

Preliminary

SemiWell Semiconductor

BT134-D

Bi-Directional Triode Thyristor

Symbol

○ 2.T2

Features

▼▲

◆ Repetitive Peak Off-State Voltage : 600V

○

3.Gate

◆ R.M.S On-State Current ( I

= 4 A )

T(RMS)

◆ High Commutation dv/dt

○

1.T1

◆ Sensitive Gate Triggering 4 Mode

TO-126

General Description

This device is sensitive gate triac suitable for direct coupling

to TTL, HTL, CMOS and application such as various logic

functions, low power AC switching applications, such as fan

speed, small light controllers and home appliance equipment.

Absolute Maximum Ratings ( T_J= 25°C unless otherwise specified )

Symbol

V_DRM

Parameter

Repetitive Peak Off-State Voltage

R.M.S On-State Current

Condition

Ratings

Units

600

T_C= 104 °C, Full Sine wave

I_T(RMS)

One Cycle, 50Hz/60Hz, Peak,

Non-Repetitive

I_TSM

Surge On-State Current

25/27

I²t

P_GM

P_G(AV)

I_GM

t = 10ms

3.1

I²t for Fusing

A²s

Peak Gate Power Dissipation

Average Gate Power Dissipation

Peak Gate Current

Over any 20ms period

0.5

V_GM

T_J

Peak Gate Voltage

Operating Junction Temperature

Storage Temperature

- 40 ~ 125

- 40 ~ 150

°C

T_STG

Mar, 2004. Rev. 0

1/6

12 3 4 5 6

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