5秒后页面跳转
BT134W-500 PDF预览

BT134W-500

更新时间: 2024-11-23 22:13:27
品牌 Logo 应用领域
恩智浦 - NXP 可控硅
页数 文件大小 规格书
7页 61K
描述
Triacs

BT134W-500 数据手册

 浏览型号BT134W-500的Datasheet PDF文件第2页浏览型号BT134W-500的Datasheet PDF文件第3页浏览型号BT134W-500的Datasheet PDF文件第4页浏览型号BT134W-500的Datasheet PDF文件第5页浏览型号BT134W-500的Datasheet PDF文件第6页浏览型号BT134W-500的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
Triacs  
BT134W series  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Glass passivated triacs in a plastic  
envelope suitable for surface  
mounting, intended for use in  
SYMBOL PARAMETER  
MAX. MAX. MAX. UNIT  
BT134W-  
500  
600  
800  
applications  
requiring  
high  
BT134W- 500F 600F 800F  
BT134W- 500G 600G 800G  
bidirectional transient and blocking  
voltage capability and high thermal  
VDRM  
Repetitive peak off-state  
voltages  
500  
600  
800  
V
cycling  
performance.  
Typical  
applications include motor control,  
industrial and domestic lighting,  
heating and static switching.  
IT(RMS)  
ITSM  
RMS on-state current  
Non-repetitive peak on-state  
current  
1
10  
1
10  
1
10  
A
A
PINNING - SOT223  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
main terminal 1  
4
T2  
T1  
2
main terminal 2  
gate  
3
G
2
3
1
tab main terminal 2  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
V
-500  
-600  
-800  
800  
VDRM  
Repetitive peak off-state  
voltages  
-
-
5001  
6001  
IT(RMS)  
ITSM  
RMS on-state current  
Non-repetitive peak  
on-state current  
full sine wave; Tsp 108 ˚C  
full sine wave; Tj = 25 ˚C prior to  
surge  
1
A
t = 20 ms  
-
-
-
10  
11  
0.5  
A
A
t = 16.7 ms  
I2t  
dIT/dt  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
t = 10 ms  
A2s  
ITM = 1.5 A; IG = 0.2 A;  
dIG/dt = 0.2 A/µs  
T2+ G+  
-
50  
50  
50  
10  
2
5
5
0.5  
150  
125  
A/µs  
A/µs  
A/µs  
A/µs  
A
T2+ G-  
-
T2- G-  
-
T2- G+  
-
IGM  
Peak gate current  
Peak gate voltage  
Peak gate power  
Average gate power  
Storage temperature  
Operating junction  
temperature  
-
VGM  
PGM  
PG(AV)  
Tstg  
Tj  
-
V
-
-
W
over any 20 ms period  
W
-40  
-
˚C  
˚C  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may  
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.  
September 1997  
1
Rev 1.200  

与BT134W-500相关器件

型号 品牌 获取价格 描述 数据表
BT134W-500D NXP

获取价格

Triacs logic level
BT134W-500D-T NXP

获取价格

TRIAC, 500 V, 1 A, 4 QUADRANT LOGIC LEVEL TRIAC
BT134W500DT/R ETC

获取价格

TRIAC|500V V(DRM)|1A I(T)RMS|TO-261AA
BT134W-500DT/R NXP

获取价格

TRIAC, 500 V, 1 A, 4 QUADRANT LOGIC LEVEL TRIAC, PLASTIC PACKAGE-4
BT134W-500E NXP

获取价格

Triacs sensitive gate
BT134W-500E-T NXP

获取价格

500V, 1A, 4 QUADRANT LOGIC LEVEL TRIAC
BT134W500ET/R ETC

获取价格

TRIAC|500V V(DRM)|1A I(T)RMS|TO-261AA
BT134W-500ET/R NXP

获取价格

500V, 1A, 4 QUADRANT LOGIC LEVEL TRIAC, PLASTIC PACKAGE-4
BT134W-500F NXP

获取价格

Triacs
BT134W-500F-T NXP

获取价格

TRIAC, 500 V, 1 A, 4 QUADRANT LOGIC LEVEL TRIAC