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BT134W-600D PDF预览

BT134W-600D

更新时间: 2024-11-25 17:01:11
品牌 Logo 应用领域
瑞能 - WEEN /
页数 文件大小 规格书
16页 222K
描述
Planar passivated very sensitive gate four quadrant triac in a SOT223 surface-mounable plastic package. This very sensitive gate "series D" triac is intended for interfacing with low power drivers including microcontrollers.

BT134W-600D 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G4Reach Compliance Code:unknown
HTS代码:8541.30.00.80风险等级:5.58
其他特性:SENSITIVE GATE外壳连接:MAIN TERMINAL 2
配置:SINGLEJESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大均方根通态电流:1 A参考标准:IEC-60134
断态重复峰值电压:600 V表面贴装:YES
端子面层:TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:4 QUADRANT LOGIC LEVEL TRIACBase Number Matches:1

BT134W-600D 数据手册

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BT134W-600D  
4Q Triac  
15 June 2016  
Product data sheet  
1. General description  
Planar passivated very sensitive gate four quadrant triac in a SOT223 surface-mounable plastic  
package. This very sensitive gate "series D" triac is intended for interfacing with low power drivers  
including microcontrollers.  
2. Features and benefits  
Direct interfacing to logic level ICs  
Direct interfacing to low power gate drivers and microcontrollers  
High blocking voltage capability  
Planar passivated for voltage ruggedness and reliability  
Surface-mountable package  
Triggering in all four quadrants  
Very sensitive gate  
3. Applications  
General purpose low power motor control  
General purpose switching and phase control  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VDRM  
repetitive peak off-  
state voltage  
-
-
600  
V
IT(RMS)  
ITSM  
RMS on-state current  
full sine wave; Tsp ≤ 108 °C; Fig. 1;  
Fig. 2; Fig. 3  
-
-
-
-
-
-
-
-
1
A
non-repetitive peak on- full sine wave; Tj(init) = 25 °C;  
state current  
10  
11  
125  
A
tp = 20 ms; Fig. 4; Fig. 5  
full sine wave; Tj(init) = 25 °C;  
tp = 16.7 ms  
A
Tj  
junction temperature  
°C  
Static characteristics  
IGT gate trigger current  
VD = 12 V; IT = 0.1 A; T2+ G+;  
Tj = 25 °C; Fig. 9  
-
-
-
2
5
5
5
mA  
mA  
mA  
VD = 12 V; IT = 0.1 A; T2+ G-;  
Tj = 25 °C; Fig. 9  
2.5  
2.5  
VD = 12 V; IT = 0.1 A; T2- G-;  
Tj = 25 °C; Fig. 9  
 
 
 
 

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