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BSZ010NE2LS5 PDF预览

BSZ010NE2LS5

更新时间: 2024-09-27 11:15:47
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 1069K
描述
N-通道功率MOSFET

BSZ010NE2LS5 数据手册

 浏览型号BSZ010NE2LS5的Datasheet PDF文件第2页浏览型号BSZ010NE2LS5的Datasheet PDF文件第3页浏览型号BSZ010NE2LS5的Datasheet PDF文件第4页浏览型号BSZ010NE2LS5的Datasheet PDF文件第5页浏览型号BSZ010NE2LS5的Datasheet PDF文件第6页浏览型号BSZ010NE2LS5的Datasheet PDF文件第7页 
BSZ010NE2LS5  
MOSFET  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ25ꢀV  
TSDSON-8ꢀFL  
(enlarged source interconnection)  
Features  
•ꢀOptimizedꢀforꢀhighꢀperformanceꢀbuckꢀconverters  
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)ꢀ@ꢀVGS=4.5ꢀV  
•ꢀ100%ꢀavalancheꢀtested  
•ꢀSuperiorꢀthermalꢀresistance  
•ꢀN-channel  
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant  
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21  
Productꢀvalidation  
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications  
S 1  
S 2  
S 3  
G 4  
8 D  
7 D  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
6 D  
5 D  
Parameter  
Value  
Unit  
VDS  
25  
V
RDS(on),max  
ID  
1
m  
A
212  
30  
Qoss  
nC  
nC  
QG(0V..4.5V)  
21  
Typeꢀ/ꢀOrderingꢀCode  
Package  
PG-TSDSON-8 FL  
Marking  
RelatedꢀLinks  
BSZ010NE2LS5  
10NE2L5  
-
Final Data Sheet  
1
Rev.ꢀ2.2,ꢀꢀ2020-05-12  

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