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BST51-T PDF预览

BST51-T

更新时间: 2024-11-21 13:00:11
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管达林顿晶体管开关
页数 文件大小 规格书
8页 50K
描述
TRANSISTOR 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243AA, PLASTIC, SC-62, 3 PIN, BIP General Purpose Small Signal

BST51-T 技术参数

生命周期:Transferred零件包装代码:SOT-89
包装说明:SMALL OUTLINE, R-PSSO-F3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.15
外壳连接:COLLECTOR最大集电极电流 (IC):1 A
集电极-发射极最大电压:60 V配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):2000JEDEC-95代码:TO-243AA
JESD-30 代码:R-PSSO-F3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHz最大关闭时间(toff):1500 ns
最大开启时间(吨):400 nsVCEsat-Max:1.3 V
Base Number Matches:1

BST51-T 数据手册

 浏览型号BST51-T的Datasheet PDF文件第2页浏览型号BST51-T的Datasheet PDF文件第3页浏览型号BST51-T的Datasheet PDF文件第4页浏览型号BST51-T的Datasheet PDF文件第5页浏览型号BST51-T的Datasheet PDF文件第6页浏览型号BST51-T的Datasheet PDF文件第7页 
DISCRETE SEMICONDUCTORS  
DATA SHEET  
book, halfpage  
BST50; BST51; BST52  
NPN Darlington transistors  
1999 Apr 26  
Product specification  
Supersedes data of 1997 Apr 16  

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