Datasheet > BST52TC

BST52TC

更新时间： 2024-11-25 03:05:59

品牌	Logo	应用领域
捷特科 - ZETEX		/
页数	文件大小	规格书
1页	16K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN

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BST52TC 数据手册

SOT89 NPN SILICON PLANAR

DARLINGTON TRANSISTOR

BST52

ISSUE 3 – J ANUARY 1996

FEATURES

Fast Switching

High h_FE

PARTMAKING DETAIL — AS3

SOT89

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

Collector-Em itter Voltage

Em itter-Base Voltage

Pea Pulse Current

1.5

Continuous Collector Current

Base Current

I_C

500

m A

I_B

100

Power Dissipation at T_{am b}=25°C

Operating and Storage Tem perature Range

P_tot

T_j:T_stg

-65 to +150

°C

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherw ise stated).

am b

PARAMETER

SYMBOL MIN.

MAX.

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_C=10µA, I_E=0

Collector-Em itter

Breakdown Voltage

I_C=10m A, I_B=0*

Em itter-Base

I_E=10µA, I_C=0

Breakdown Voltage

Em itter Cut-Off Current

I_EBO

I_CES

V_EB=8V, I_E=0

µA

Collector-Em itter

Cut-Off Current

V_CE=80V, I_C=0

Collector-Em itter

Saturation Voltage

V_CE(sat)

1.3

I_C=500m A, I_B=0.5m A

T_j=150°C

Base-Em itter

Saturation Voltage

V_BE(sat)

h_FE

1.9

I_C=500m A, I_B=0.5m A

Static Forward Current

Transfer Ratio

I_C=150m A, V_CE=10V*

I_C=-500m A, V_CE=-10V*

Turn On Tim e

Turn Off Tim e

t_on

400 Typical

1.5K Typical

I_C=500m A

I_Bon=I_Boff=0.5m A

t_off

* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

Spice param eter data is available upon request for this device

For typical characteristics graphs see FMMT614 datasheet.

3 - 80

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