Datasheet > BSS70R

BSS70R

更新时间： 2024-11-23 22:21:23

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SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS

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BSS70R 数据手册

SOT23 PNP SILICON PLANAR MEDIUM

POWER SWITCHING TRANSISTORS

BSS69

BSS70

ISSUE 2 SEPTEMBER 1995

✪

PARTMARKING DETAILS BSS69 - L2

BSS70 - L3

BSS69R - L6

BSS70R - L7

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

-40

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-40

-5

Peak Pulse Current

-200

°C

Continuous Collector Current

Base Current

I_C

-100

I_B

-50

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

P_TOT

t_j:t_stg

330

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C).

amb

PARAMETER

SYMBOL MIN. MAX. UNIT

CONDITIONS.

Collector-Emitter Breakdown Voltage

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector- Emitter Cut-off Current

-40

-5

I =-1mA

I =-10µA

-50

=-30V

Collector-Emitter

Saturation Voltage

-0.25

-0.40

I =-10mA, I =-1mA

I =-50mA, I =-5mA*

Base-Emitter Saturation Voltage

-0.65

-0.85

-0.95

I =-10mA, I =-1mA

I =-50mA, I =-5mA*

Static Forward Current

Transfer Ratio

BSS69

I =-100µA,

I =-1mA,

150

300

I =-10mA, V =-1V

I =-50mA*,

I =-100mA*,

Static Forward Current

Transfer Ratio

BSS70

100

I =-100µA,

I =-1mA,

I =-10mA, V =-1V

I =-50mA*,

I =-100mA*,

Transition Frequency

BSS69

BSS70

200

250

MHz

I =-10mA, V =-20V

f=100MHz

Collector-Base Capacitance

Emitter-Base Capacitance

Noise Figure

4.5

=-5V, f=100kHz

=-0.5V, f=100kHz

Typ. 5

I =-100µΑ, V =-5V

R =1kΩ, f=10Hz to15.7 kHz

Switching times: Delay; Rise

Storage Time

Fall Time

t ; t

=-3V, I =-10mA

= I =-1mA

225

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

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