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BSR43-TP PDF预览

BSR43-TP

更新时间: 2024-11-23 21:19:47
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
2页 239K
描述
Small Signal Bipolar Transistor,

BSR43-TP 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.69
湿度敏感等级:1峰值回流温度(摄氏度):260
处于峰值回流温度下的最长时间:10Base Number Matches:1

BSR43-TP 数据手册

 浏览型号BSR43-TP的Datasheet PDF文件第2页 
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
BSR43  
Features  
Silicon  
NPN epitaxial planer  
Transistors  
Low Voltage  
High Current  
Complement to BSR33  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
·
·
·
Halogen free available upon request by adding suffix "-HF"  
SOT-89  
O
Maximum Ratings @ 25 C Unless Otherwise Specified  
A
K
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
Rating  
80  
90  
5
1
250  
500  
150  
Unit  
V
V
B
V
A
E
Rthja  
PC  
Thermal Resistance From Junction To Ambient  
Collector Dissipation  
oC/W  
mW  
R
C
TJ  
Operating Junction Temperature  
D
TSTG  
Storage Temperature  
-55 to +150  
R
G
H
O
Electrical Characteristics @ 25 C Unless Otherwise Specified  
J
F
Symbol  
Parameter  
Collector-Emitter Breakdown Voltage  
(IC=1mAdc, IB=0)  
Min  
Typ  
Max  
Units  
V(BR)CEO  
80  
---  
---  
Vdc  
V(BR)CBO  
V(BR)EBO  
ICBO  
Collector-Base Breakdown Voltage  
(IC=100uAdc, IE=0)  
Collector-Emitter Breakdown Voltage  
(IE=100uAdc, IC=0)  
Collector Cutoff Current  
(VCB=60Vdc, IE=0Vdc)  
Emitter Cutoff Current  
90  
5
---  
---  
---  
---  
---  
---  
Vdc  
Vdc  
1
2
3
1.BASE  
2.COLLECTOR  
3.EMITTER  
---  
---  
100  
100  
nAdc  
nAdc  
IEBO  
(VEB=5Vdc, IC=0Vdc)  
hFE  
DC Current Gain  
(IC=0.1mAdc, VCE=5Vdc)*  
(IC=100mAdc, VCE=5Vdc)*  
(IC=0.5Adc, VCE=5Vdc)*  
30  
100  
50  
---  
---  
---  
---  
300  
---  
---  
---  
---  
VCE(sat)  
Collector-Emitter Saturation Voltage  
(IC=150mAdc, IB=15mAdc) *  
(IC=500mAdc, IB=50mAdc) *  
ꢀꢁꢂꢃꢄꢅꢁꢄꢅꢆ  
---  
---  
---  
---  
0.25  
0.5  
Vdc  
Vdc  
ꢀꢁꢂꢆ  
ꢁꢄꢇꢈꢃꢅꢆ  
ꢂꢂꢆ  
ꢄꢋꢌꢃꢅꢆ  
ꢂꢉꢊꢆ  
ꢂꢁꢄꢆ  
ꢂꢉꢊꢆ  
ꢂꢁꢄꢆ  
ꢒꢍꢐꢓꢆ  
ꢎꢍꢔꢕꢆ  
ꢐꢍꢓꢎꢆ  
ꢕꢍꢑꢕꢆ  
ꢘꢍꢐꢒꢆ  
ꢐꢍꢕꢕꢆ  
ꢕꢍꢐꢐꢆ  
ꢕꢍꢐꢑꢆ  
ꢕꢍꢐꢑꢆ  
ꢎꢍꢒꢕꢆ  
ꢉꢆ  
ꢖꢆ  
ꢇꢆ  
ꢀꢆ  
ꢃꢆ  
ꢙꢆ  
ꢝꢆ  
ꢈꢆ  
ꢞꢆ  
ꢍꢎꢏꢐꢆ  
ꢍꢕꢔꢐꢆ  
ꢍꢎꢗꢒꢆ  
ꢍꢕꢐꢎꢆ  
ꢍꢕꢓꢘꢆ  
ꢍꢎꢎꢑꢆ  
ꢍꢕꢎꢐꢆ  
ꢍꢕꢎꢗꢆ  
ꢍꢕꢎꢗꢆ  
ꢍꢕꢗꢗꢆ  
ꢍꢎꢑꢎꢆ  
ꢍꢕꢏꢎꢆ  
ꢍꢎꢔꢗꢆ  
ꢍꢕꢐꢓꢆ  
ꢍꢎꢕꢕꢆ  
ꢚꢚꢚꢚꢚꢆ  
ꢒꢍꢔꢕꢆ  
ꢎꢍꢑꢕꢆ  
ꢒꢍ25  
ꢎꢍꢕꢕꢆ  
ꢘꢍꢗꢒꢆ  
ꢚꢚꢚꢚꢚꢆ  
VBE(sat)  
Base-emitter saturation voltage  
(IC=150mAdc, IB=15mAdc) *  
(IC=500mAdc, IB=50mAdc) *  
---  
---  
---  
---  
1
1.2  
Vdc  
Vdc  
Current Gain-Bandwidth Product  
(VCE=10Vdc, IC=0Adc, f=100MHz)  
fT  
100  
---  
---  
---  
---  
---  
12  
90  
MHz  
pF  
ꢌꢛꢜꢆ  
ꢍꢕꢎꢓꢆ  
ꢍꢕꢘꢎꢆ  
ꢍꢕꢎꢔꢆ  
ꢍꢕꢔꢐꢆ  
ꢕꢍꢒꢑꢆ  
ꢕꢍꢗꢐꢆ  
ꢕꢍꢒꢎꢆ  
ꢎꢍꢔꢕꢆ  
Collector output capacitance  
(VCB=10Vdc, f=1.0MHz, IE=0)  
Cob  
Cib  
 ꢆ  
Emitter input capacitance  
(VCB=10Vdc, f=1.0MHz, IE=0)  
---  
pF  
* Pulse measurement  
www.mccsemi.com  
1 of 2  
Revision: A  
2014/07/31  

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