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BSR56S62Z PDF预览

BSR56S62Z

更新时间: 2024-09-25 20:00:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 光电二极管晶体管
页数 文件大小 规格书
3页 42K
描述
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET

BSR56S62Z 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownHTS代码:8541.21.00.95
风险等级:5.67配置:SINGLE
最大漏源导通电阻:25 ΩFET 技术:JUNCTION
最大反馈电容 (Crss):5 pFJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
工作模式:DEPLETION MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BSR56S62Z 数据手册

 浏览型号BSR56S62Z的Datasheet PDF文件第2页浏览型号BSR56S62Z的Datasheet PDF文件第3页 
BSR56  
N-Channel Low-Frequency Low-Noise  
3
Amplifier  
This device is designed for low-power chopper or switching application  
sourced from process 51  
2
SOT-23  
1
Mark: M4  
1. Drain 2. Source 3. Gate  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
40  
Units  
V
V
Drain-Gate Voltage  
Gate-Source Voltage  
Forward Gate Current  
V
V
DGO  
- 40  
GSO  
I
50  
mA  
mW  
°C  
GF  
P
Total Power Dissipation up to T  
Storage Temperature Range  
Junction Temperature  
=40°C  
250  
tot  
STG  
J
amb  
T
T
- 55 ~ 150  
150  
°C  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max. Units  
BV  
Gate-Source Voltage  
V
V
V
V
V
V
V
V
= 0V, I = 1µA  
40  
V
GSS  
GSS  
DSS  
DS  
GS  
DS  
DS  
GS  
GS  
DS  
DD  
C
I
I
Gate Reverse Current  
Zero-Gate Voltage Drain Current  
Gate-Source Cut-off Voltage  
Drain-Source On Voltage  
Drain-Source On Reverse  
Reverse Transfer Capacitance  
Delay Time  
= 20V  
1
nA  
mA  
V
= 15V, V = 0V  
50  
4
GS  
V
V
(off)  
(on)  
= 15V, I = 0.5nA  
10  
750  
25  
5
GS  
DS  
D
= 0V, I = 20mA  
mV  
D
r
(on)  
= 0V, I = 0  
D
ds  
C
= 10V, V = 0V  
pF  
nS  
nS  
nS  
rss  
GS  
t
t
t
= 10V, V (on) = 0V  
6
d
r
GS  
I
= 20mA, V (off) = 10V  
Rise Time  
D
GS  
3
Turn-off Time  
25  
off  
©2001 Fairchild Semiconductor Corporation  
Rev. A, September 2001  

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