Datasheet > BSR31-Q

BSR31-Q

更新时间： 2024-11-08 11:13:39

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
7页	176K
描述
60 V, 1 A PNP medium power transistorProduction

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BSR31-Q 数据手册

BSR31-Q

60 V, 1 A PNP medium power transistor

10 March 2023

Product data sheet

1. General description

PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package.

NPN complement: BSR41-Q

2. Features and benefits

•

High current

•

High power dissipation capability

Exposed heatsink for excellent thermal and electrical conductivity

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Linear voltage regulators

High-side switches

Battery-driven devices

MOSFET drivers

Amplifiers

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

-60

I_C

collector current

-1

I_CM

h_FE

peak collector current single pulse; t_p≤ 1 ms

DC current gain V_CE= -5 V; I_C= -100 mA; pulsed; t_p≤

-2

100

300

300 µs; δ ≤ 0.01; T_amb= 25 °C

5. Pinning information

Table 2. Pinning information

Symbol

Description

emitter

Simplified outline

Graphic symbol

collector

base

006aaa231

SOT89

12 3 4 5 6 7

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