生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-F3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.68 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 1 A |
基于收集器的最大容量: | 20 pF | 集电极-发射极最大电压: | 60 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 50 |
JESD-30 代码: | R-PSSO-F3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 100 MHz | 最大关闭时间(toff): | 650 ns |
最大开启时间(吨): | 500 ns | VCEsat-Max: | 0.5 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSR31-TAPE-7 | NXP |
获取价格 |
TRANSISTOR 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign | |
BSR31TRL | NXP |
获取价格 |
TRANSISTOR 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign | |
BSR31TRL | YAGEO |
获取价格 |
Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 | |
BSR31TRL13 | NXP |
获取价格 |
TRANSISTOR 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign | |
BSR31TRL13 | YAGEO |
获取价格 |
Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 | |
BSR32 | YAGEO |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon | |
BSR32 | NXP |
获取价格 |
TRANSISTOR 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign | |
BSR32-T | NXP |
获取价格 |
TRANSISTOR 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, SOT-89, 3 PIN, BIP General Pur | |
BSR32T/R | NXP |
获取价格 |
TRANSISTOR 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign | |
BSR32-TAPE-13 | NXP |
获取价格 |
TRANSISTOR 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign |