Datasheet > BPV09NF

BPV09NF

更新时间： 2023-12-06 20:07:50

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	131K
描述
Silicon PIN Photodiode

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BPV09NF 数据手册

BPV09NF

Vishay Semiconductors

www.vishay.com

Silicon PIN Photodiode

FEATURES

• Package type: leaded

• Package form: T-1¾

• Dimensions (in mm): Ø 5

• Leads with stand-off

• High radiant sensitivity

• Daylight blocking filter matched with 870 nm

to 950 nm emitters

16140-1

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

DESCRIPTION

• High speed detector for infrared radiation

BPV09NF is a PIN photodiode with high speed and high

radiant sensitivity in black, T-1¾ plastic package with

daylight blocking filter. Filter bandwidth is matched with

870 nm to 950 nm IR emitters.

PRODUCT SUMMARY

I_ra(μA)

COMPONENT

ϕ (°)

λ_0.5(nm)

at E_e= 1.0 mW/cm², λ = 950 nm, V_R= 5.0 V

BPV09NF

Note

790 to 1050

•

Test condition see table “Basic Characteristics”

ORDERING INFORMATION

ORDERING CODE

PACKAGING

Bulk

REMARKS

MOQ: 4000 pcs, 4000 pcs/bulk

PACKAGE FORM

BPV09NF

T-1¾

Note

MOQ: minimum order quantity

•

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

V_R

Operating temperature range

Storage temperature range

Soldering temperature

T_amb

T_stg

-40 to +100

260

°C

t ≤ 5 s, 2 mm from body

T_sd

Rev. 1.0, 24-Feb-2021

Document Number: 80275

For technical questions, contact: detectortechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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