Datasheet > BPV10_08

BPV10_08

更新时间： 2024-09-24 06:44:11

品牌	Logo	应用领域
威世 - VISHAY		光电二极管光电二极管
页数	文件大小	规格书
5页	107K
描述
Silicon PIN Photodiode, RoHS Compliant

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BPV10_08 数据手册

BPV10

Vishay Semiconductors

Silicon PIN Photodiode, RoHS Compliant

FEATURES

• Package type: leaded

• Package form: T-1¾

• Dimensions (in mm): Ø 5

• Leads with stand-off

• Radiant sensitive area (in mm²): 0.78

• High photo sensitivity

• High radiant sensitivity

94 8390

• Suitable for visible and near infrared radiation

• High bandwidth: 250 MHz at V_R= 12 V

• Fast response times

DESCRIPTION

• Angle of half sensitivity: ϕ = 20ꢀ

BPV10 is a PIN photodiode with high speed and high radiant

sensitivity in clear, T-1¾ plastic package. It is sensitive to

visible and near infrared radiation.

• Lead (Pb)-free component in accordance with

RoHS 2002/95/EC and WEEE 2002/96/EC

APPLICATIONS

• High speed photo detector

PRODUCT SUMMARY

COMPONENT

I_ra(mA)

ϕ (deg)

λ_0.1(nm)

BPV10

380 to 1100

Note

Test condition see table “Basic Characteristics”

ORDERING INFORMATION

ORDERING CODE

PACKAGING

REMARKS

PACKAGE FORM

BPV10

Bulk

MOQ: 4000 pcs, 4000 pcs/bulk

T-1¾

Note

MOQ: minimum order quantity

ABSOLUTE MAXIMUM RATINGS

PARAMETER

TEST CONDITION

SYMBOL

V_R

VALUE

UNIT

Reverse voltage

215

ꢀC

Power dissipation

T_amb≤ 25 ꢀC

P_V

Junction temperature

T_j

100

Operating temperature range

Storage temperature range

Soldering temperature

T_amb

T_stg

- 40 to + 100

260

ꢀC

t ≤ 5 s, 2 mm from body

Connected with Cu wire, 0.14 mm²

T_sd

ꢀC

Thermal resistance junction/ambient

R_thJA

350

K/W

Note

T_amb= 25 ꢀC, unless otherwise specified

www.vishay.com

334

For technical questions, contact: detectortechsupport@vishay.com

Document Number: 81502

Rev. 1.6, 08-Sep-08

12 3 4 5

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