Datasheet > BPV11-AS21

BPV11-AS21

更新时间： 2024-02-20 05:35:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	117K
描述
Photo Transistor, 850nm, 0.05A I(C)

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中文翻译

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技术参数
数据手册

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BPV11-AS21 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.67
最大暗电源：	50 nA	安装特点：	THROUGH HOLE MOUNT
最大通态电流：	0.05 A	最高工作温度：	100 °C
最低工作温度：	-55 °C	峰值波长：	850 nm
最大功率耗散：	0.15 W	子类别：	Photo Transistors
表面贴装：	NO	Base Number Matches：	1

BPV11-AS21 数据手册

BPV11

Vishay Semiconductors

Silicon NPN Phototransistor

Description

BPV11 is a very high sensitive silicon NPN epitaxial

planar phototransistor in a standard T-1¾ plastic

package.

Due to its waterclear epoxy lens the device is sensi-

tive to visible and near infrared radiation.

The viewing angle of

ambient straylight.

15° makes it insensible to

12785

A base terminal is available to enable biasing and

sensitivity control.

Features

Applications

• Detector for industrial electronic circuitry, mea-

surement and control

• Very high photo sensitivity

• Standard T-1¾ (∅ 5 mm) package with

clear lens

• Angle of half sensitivity ϕ = 15°

• Base terminal available

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Absolute Maximum Ratings

T_amb= 25 °C, unless otherwise specified

Parameter

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector current

Test condition

Symbol

V_CBO

Value

Unit

V_CEO

V_EBO

I_C

°C

t_p/T = 0.5, t_p≤ 10 ms

T_amb≤ 47 °C

I_CM

P_tot

T_j

Collector peak current

Total Power Dissipation

Junction Temperature

Storage Temperature Range

Soldering Temperature

100

150

100

T_stg

T_sd

- 55 to + 100

260

°C

t ≤ 5 s, 2 mm from body

°C

Thermal Resistance Junction/

Ambient

R_thJA

350

K/W

Document Number 81504

Rev. 1.5, 13-Nov-06

www.vishay.com

12 3 4 5 6 7

中文翻译

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