Datasheet > BPV11F_08

BPV11F_08

更新时间： 2024-01-13 19:49:53

品牌	Logo	应用领域
威世 - VISHAY		晶体光电晶体管光电晶体管
页数	文件大小	规格书
5页	112K
描述
Silicon NPN Phototransistor, RoHS Compliant

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BPV11F_08 数据手册

BPV11F

Vishay Semiconductors

Silicon NPN Phototransistor, RoHS Compliant

FEATURES

• Package type: leaded

• Package form: T-1¾

• Dimensions (in mm): Ø 5

• High radiant sensitivity

• Daylight blocking filter matched with 940 nm

emitters

12784

• Fast response times

• Angle of half sensitivity: ϕ = 15ꢀ

• Base terminal connected

• Lead (Pb)-free component in accordance with

RoHS 2002/95/EC and WEEE 2002/96/EC

DESCRIPTION

BPV11F is a silicon NPN phototransistor with high radiant

sensitivity in black, T-1¾ plastic package with base terminal

and daylight blocking filter. Filter bandwidth is matched with

900 nm to 950 nm IR emitters.

APPLICATIONS

• Detector for industrial electronic circuitry, measurement

and control

PRODUCT SUMMARY

COMPONENT

I_ca(mA)

ϕ (deg)

λ_0.5(nm)

BPV11F

900 to 980

Note

Test condition see table “Basic Characteristics”

ORDERING INFORMATION

ORDERING CODE

PACKAGING

REMARKS

PACKAGE FORM

BPV11F

Bulk

MOQ: 3000 pcs, 3000 pcs/bulk

T-1¾

Note

MOQ: minimum order quantity

ABSOLUTE MAXIMUM RATINGS

PARAMETER

TEST CONDITION

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

VALUE

UNIT

Collector base voltage

Collector emitter voltage

Emitter base voltage

Collector current

ꢀC

Collector peak current

Power dissipation

t_p/T = 0.5, t_p≤ 10 ms

T_amb≤ 47 ꢀC

I_CM

P_V

100

150

Junction temperature

T_j

100

Operating temperature range

Storage temperature range

Soldering temperature

T_amb

T_stg

T_sd

- 40 to + 100

260

ꢀC

t ≤ 5 s, 2 mm from body

ꢀC

Thermal resistance junction/ambient

Connected with Cu wire, 0.14 mm²

R_thJA

350

K/W

Note

T_amb= 25 ꢀC, unless otherwise specified

www.vishay.com

346

For technical questions, contact: detectortechsupport@vishay.com

Document Number: 81505

Rev. 1.6, 05-Sep-08

12 3 4 5

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