Datasheet > BLS65R380

BLS65R380

更新时间： 2024-11-26 14:55:59

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
16页	632K
描述
BLS65R380, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications.

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BLS65R380 数据手册

BLS65R380

Power MOSFET

1．Description

BLS65R380, the silicon N-channel Enhanced

MOSFETs, is obtained by advanced Super

Junction technology which reduce the conduction

loss, improve switching performance. The

transistor is suitable device for SMPS, high speed

switching and general purpose applications.

KEY CHARACTERISTICS

Parameter

V_DS@Tj.max

I_D

Value

700

Unit

R_DS(ON).Typ

FEATURES

0.33

Ω



Fast Switching

100% avalanche tested

Improved dv/dt capability

APPLICATIONS

High frequency switching mode power supply



ORDERING INFORMATION

Ordering Codes

BLS65R380-P

BLS65R380-A

BLS65R380-U

BLS65R380-D

BLS65R380-B

Package

Product Code

Packing

Tube

Tape Reel

TO-220

TO-220F

TO-251

TO-252

TO-263

BLS65R380

BLS65R380-A

XXXX Product Code

(2) Package type

(1) Chip name

XXXX

YYWW ZZ

SSSSS

YYWW Year&Week

ZZ Assembly Code

SSSSS Lot Code

(1) BLS65R380:650V 380mΩ

(2) A:TO-220F P:TO-220

U:TO-251 D:TO-252 B:TO-263

BLS65R380

V1.1

7/2019

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