品牌 | Logo | 应用领域 |
上海贝岭 - BELLING | / | |
页数 | 文件大小 | 规格书 |
12页 | 1459K | |
描述 | ||
BLS65R041F, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose appl |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
BLS65R150F | BELLING | BLS65R150F, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction |
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BLS65R165 | BELLING | BLS65R165, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction |
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BLS65R380 | BELLING | BLS65R380, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction |
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BLS65R560 | BELLING | BLS65R560, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction |
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BLS6G2731(S)-120 | NXP | RF Manual 16th edition |
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BLS6G2731-120 | NXP | LDMOS S-band radar power transistor |
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