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BLS65R041F PDF预览

BLS65R041F

更新时间: 2023-12-06 20:02:22
品牌 Logo 应用领域
上海贝岭 - BELLING /
页数 文件大小 规格书
12页 1459K
描述
BLS65R041F, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose appl

BLS65R041F 数据手册

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BLS65R041F  
Power MOSFET  
1Description  
BLS65R041F, the silicon N-channel  
Enhanced MOSFETs, is obtained by advanced  
Super Junction technology which reduce the  
conduction loss, improve switching performance.  
The transistor is suitable device for SMPS, high  
speed switching and general purpose  
applications.  
KEY CHARACTERISTICS  
Parameter  
VDS@Tj.max  
ID  
Value  
700  
75  
Unit  
V
A
RDS(ON).Typ  
FEATURES  
0.035  
Fast Switching  
100% avalanche tested  
Improved dv/dt capability  
APPLICATIONS  
High frequency switching mode power supply  
TO-247  
TO-3PN  
ORDERING INFORMATION  
Ordering Codes  
Package  
TO-247  
TO-3PN  
Product Code  
S65R041F  
S65R041F  
Packing  
Tube  
Tube  
BLS65R041F-F  
BLS65R041F-W  
BLS65R041F-F  
(2) Package type  
(1) Chip name  
XXXXProduct Code  
YYWWYear&Week  
ZZAssembly Code  
SSSSSLot Code  
XXXX  
YYWW ZZ  
SSSSS  
(1) BLS65R041F:650V 41mΩ  
(2) F:TO-247 W:TO-3PN  
BLS65R041F  
V1.0  
3/2020  
www.belling.com.cn  
Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited  
©2011 Belling All Rights Reserved  
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