Datasheet > BLL6H0514L-130,112

BLL6H0514L-130,112

更新时间： 2024-01-26 08:38:07

品牌	Logo	应用领域
恩智浦 - NXP		局域网放大器晶体管
页数	文件大小	规格书
13页	99K
描述
BLL6H0514L-130

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BLL6H0514L-130,112 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
零件包装代码：	DFM	针数：	2
Reach Compliance Code：	compliant	风险等级：	8.53
Base Number Matches：	1

BLL6H0514L-130,112 数据手册

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BLL6H0514L-130;

BLL6H0514LS-130

LDMOS driver transistor

Rev. 2 — 13 September 2010

Product data sheet

1. Product profile

1.1 General description

130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz

range.

Table 1.

Application information

Typical RF performance at T_case= 25 C; I_Dq= 50 mA; in a class-AB application circuit.

Mode of operation

t_p



V_DS

(V)

P_L

G_p

RL_in_D

P_droop(pulse)t_r

t_f

(MHz)

(s)

128

(%)

(W)

130

(dB) (dB) (%)

(dB)

(ns)

pulsed RF

960 to 1215

1200 to 1400 300

1.2 Features and benefits

 Easy power control

 Integrated ESD protection

 High flexibility with respect to pulse formats

 Excellent ruggedness

 High efficiency

 Excellent thermal stability

 Designed for broadband operation (0.5 GHz to 1.4 GHz)

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range

12 3 4 5 6 7...13

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