Datasheet > BLL6H1214L-250,112

BLL6H1214L-250,112

更新时间： 2024-01-25 07:55:41

品牌	Logo	应用领域
恩智浦 - NXP		局域网放大器晶体管
页数	文件大小	规格书
13页	103K
描述
BLL6H1214L-250

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BLL6H1214L-250,112 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
零件包装代码：	SOT	针数：	2
Reach Compliance Code：	compliant	风险等级：	5.7
Base Number Matches：	1

BLL6H1214L-250,112 数据手册

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BLL6H1214L-250;

BLL6H1214LS-250

LDMOS L-band radar power transistor

Rev. 3 — 14 July 2010

Product data sheet

1. Product profile

1.1 General description

250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to

1.4 GHz range.

Table 1.

Test information

Typical RF performance at T_case= 25 C; t_p= 300 s;  = 10 %; I_Dq= 100 mA; in a class-AB

production test circuit.

Mode of operation

V_DS

(V)

P_L

G_p

(dB) (%)

17 55

_D

t_r

t_f

(GHz)

(W)

250

(ns)

pulsed RF

1.2 to 1.4 50

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features and benefits

 Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage

of 50 V, an I_Dqof 100 mA, a t_pof 300 s with  of 10 %:

 Output power = 250 W

 Power gain = 17 dB

 Efficiency = 55 %

 Easy power control

 Integrated ESD protection

 High flexibility with respect to pulse formats

 Excellent ruggedness

 High efficiency

 Excellent thermal stability

 Designed for broadband operation (1.2 GHz to 1.4 GHz)

 Internally matched for ease of use

 Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC

12 3 4 5 6 7...13

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