Datasheet > BLF7G21L-160P,118

BLF7G21L-160P,118

更新时间： 2024-11-23 22:07:43

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RF FET LDMOS 65V 18DB SOT1121A

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BLF7G21L-160P;

BLF7G21LS-160P

Power LDMOS transistor

Rev. 4 — 1 September 2015

Product data sheet

1. Product profile

1.1 General description

160 W LDMOS power transistor for base station applications at frequencies from

1800 MHz to 2050 MHz, also suitable for operation at 1495 MHz to 1511 MHz.

Table 1.

Typical performance

Typical RF performance at T_case= 25 C in a common source class-AB production test circuit.

Mode of operation

I_Dq

V_DS

(V)

P_L(AV)

(W)

G_p

_D

(%)

ACPR

(dBc)

30 ^[1]

34 ^[2]

(MHz)

(mA)

1080

(dB)

2-carrier W-CDMA

1-carrier W-CDMA

1930 to 1990

18.0

[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;

carrier spacing 5 MHz.

[2] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.

1.2 Features and benefits

 Excellent ruggedness

 High efficiency

 Low thermal resistance providing excellent thermal stability

 Designed for broadband operation (1800 MHz to 2050 MHz)

 Lower output capacitance for improved performance in Doherty applications

 Designed for low memory effects providing excellent pre-distortability

 Internally matched for ease of use

 Integrated ESD protection

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 RF power amplifiers for base stations and multi carrier applications in the 1800 MHz to

2050 MHz frequency range

12 3 4 5 6 7...15

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