Datasheet > BLF7G22LS-130,112

BLF7G22LS-130,112

更新时间： 2024-11-23 20:04:27

品牌	Logo	应用领域
恩智浦 - NXP		放大器晶体管
页数	文件大小	规格书
15页	154K
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BLF7G22LS-130

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BLF7G22LS-130,112 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	SOT
针数：	2	Reach Compliance Code：	compliant
风险等级：	8.52	Base Number Matches：	1

BLF7G22LS-130,112 数据手册

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BLF7G22L-130;

BLF7G22LS-130

Power LDMOS transistor

Rev. 4 — 20 January 2011

Product data sheet

1. Product profile

1.1 General description

130 W LDMOS power transistor for base station applications at frequencies from

2000 MHz to 2200 MHz.

Table 1.

Typical performance

Typical RF performance at T_case= 25 °C in a common source class-AB production test circuit.

Mode of operation

I_Dq

V_DS

(V)

P_L(AV)

(W)

G_p

η_D

ACPR

(MHz)

(mA)

950

(dB)

18.5

(%) (dBc)

2-carrier W-CDMA

1-carrier W-CDMA

2110 to 2170

−32^[1]

−39^[2]

[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;

carrier spacing 5 MHz.

[2] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.

1.2 Features and benefits

Excellent ruggedness

High efficiency

Low R_thproviding excellent thermal stability

Designed for broadband operation (2000 MHz to 2200 MHz)

Lower output capacitance for improved performance in Doherty applications

Designed for low memory effects providing excellent digital pre-distortion capability

Internally matched for ease of use

Integrated ESD protection

Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

RF power amplifiers for W-CDMA base stations and multi carrier applications in the

2000 MHz to 2200 MHz frequency range

12 3 4 5 6 7...15

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