Datasheet > BLF7G22L-160,118

BLF7G22L-160,118

更新时间： 2024-11-26 21:16:19

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
15页	195K
描述
BLF7G22L-160

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技术参数
数据手册

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BLF7G22L-160,118 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	SOT
针数：	2	Reach Compliance Code：	compliant
风险等级：	5.84	Base Number Matches：	1

BLF7G22L-160,118 数据手册

BLF7G21L-160P;

BLF7G21LS-160P

Power LDMOS transistor

Rev. 3 — 10 February 2014

Product data sheet

1. Product profile

1.1 General description

160 W LDMOS power transistor for base station applications at frequencies from

1800 MHz to 2050 MHz, also suitable for operation at 1495 MHz to 1511 MHz.

Table 1.

Typical performance

Typical RF performance at T_case= 25 C in a common source class-AB production test circuit.

Mode of operation

I_Dq

V_DS

(V)

P_L(AV)

(W)

G_p

_D

(%)

ACPR

(dBc)

30 ^[1]

34 ^[2]

(MHz)

(mA)

1080

(dB)

2-carrier W-CDMA

1-carrier W-CDMA

1930 to 1990

18.0

[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;

carrier spacing 5 MHz.

[2] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.

1.2 Features and benefits

 Excellent ruggedness

 High efficiency

 Low thermal resistance providing excellent thermal stability

 Designed for broadband operation (1800 MHz to 2050 MHz)

 Lower output capacitance for improved performance in Doherty applications

 Designed for low memory effects providing excellent pre-distortability

 Internally matched for ease of use

 Integrated ESD protection

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 RF power amplifiers for base stations and multi carrier applications in the 1800 MHz to

2050 MHz frequency range

12 3 4 5 6 7...15

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