Datasheet > BLF7G22L-250P,118

BLF7G22L-250P,118

更新时间： 2024-11-26 14:48:07

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
14页	985K
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BLF7G22L-250P

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BLF7G22L-250P,118 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	SOT
针数：	2	Reach Compliance Code：	compliant
风险等级：	5.84	Base Number Matches：	1

BLF7G22L-250P,118 数据手册

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BLF7G22L-250P;

BLF7G22LS-250P

Power LDMOS transistor

Rev. 3 — 12 July 2013

Product data sheet

1. Product profile

1.1 General description

250 W LDMOS power transistor for base station applications at frequencies from

2110 MHz to 2170 MHz.

Table 1.

Typical performance

Typical RF performance at T_case= 25 C in a common source class-AB production test circuit.

Mode of operation

I_Dq

V_DS

(V)

P_L(AV)

(W)

G_p

_D

(%) (dBc)

30^[1]

ACPR

(MHz)

(mA)

1900

(dB)

18.5

2-carrier W-CDMA

2110 to 2170

[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing

5 MHz.

1.2 Features and benefits

 Excellent ruggedness

 High efficiency

 Low R_thproviding excellent thermal stability

 Designed for low memory effects providing excellent pre-distortability

 Internally matched for ease of use

 Integrated ESD protection

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 RF power amplifiers for W-CDMA base stations and multi carrier applications in the

2110 MHz to 2170 MHz frequency range

12 3 4 5 6 7...14

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